Related papers: Low-Frequency Raman Modes and Electronic Excitatio…
Hybridisation of electronic bands of two-dimensional materials, assembled into twistronic heterostructures, enables one to tune their optoelectronic properties by selecting conditions for resonant interlayer hybridisation. Resonant…
The temperature evolution of the resonant Raman scattering from high-quality bilayer 2H-MoS$_{2}$ encapsulated in hexagonal BN flakes is presented. The observed resonant Raman scattering spectrum as initiated by the laser energy of 1.96 eV,…
The resonance effects on the Raman spectra from 5 to 900 cm-1 of few-layer MoS2 thin films up to 14-layers were investigated by using six excitation energies. For the main first-order Raman peaks, the intensity maximum occurs at ~2.8 eV for…
It is known that carrier mobility in layered semiconductors generally increases from two-dimension (2D) to three-dimension due to suppressed scattering channels resulting from decreased densities of electron and phonon states. In this work,…
We have performed polarized Raman scattering measurements on the newly discovered superconductor Nd(O,F)BiS$_2$ ($T_c = 4$ K). We observe 2 Raman active modes, with frequencies in accordance with first-principles calculations. One A$_{1g}$…
Transition metal dichalcogenide MoS2 is a two-dimensional material, attracting much attention for next-generation applications thanks to rich functionalities stemmed from the crystal structure. Many experimental and theoretical works have…
We investigate correlations between low-frequency vibrational modes and rearrangements in two-dimensional colloidal glasses composed of thermosensitive microgel particles which readily permit variation of sample packing fraction. At each…
We present polarization resolved Raman scattering study of surface vibration modes in the topological insulator Bi$_2$Se$_3$ single crystal and thick films. Besides the four Raman active bulk phonons, we observed four additional modes with…
We have developed an incandescent Mo source to fabricate large-area single-crystalline MoSe2 thin films. The as-grown MoSe2 thin films were characterized using transmission electron microscopy, energy dispersive X-ray spectroscopy, atomic…
Molybdenum disulfide, MoS2, has recently gained considerable attention as a layered material where neighboring layers are only weakly interacting and can easily slide against each other. Therefore, mechanical exfoliation allows the…
We fabricate large-area atomically thin MoS$_2$ layers through the direct transformation of crystalline molybdenum MoS$_2$ (MoO$_3$) by sulfurization at relatively low temperatures. The obtained MoS2 sheets are polycrystalline (~10-20 nm…
Raman scattering excitation (RSE) is an experimental technique in which the spectrum is made up by sweeping the excitation energy when the detection energy is fixed. We study the low-temperature ($T$=5~K) RSE spectra measured on four high…
In this article, we investigate electrical transport properties in ultrathin body (UTB) MoS2 two-dimensional (2D) crystals with channel lengths ranging from 2 {\mu}m down to 50 nm. We compare the short channel behavior of sets of MOSFETs…
Stimulated Raman scattering (SRS) in ultra-high-Q surface-tension-induced spherical and chip-based toroid microcavities is considered both theoretically and experimentally. These microcavities are fabricated from silica, exhibit small mode…
WTe$_2$ recently attracted considerable attention as a layered material exhibiting ferroelectricity, giant magnetoresistance, and pressure-induced superconductivity. In this study, we performed Raman spectroscopy on bulk WTe$_2$, including…
Regulation of electronic structure and mobility cut-on rate in two-dimensional transition metal dichalcogenides (TMDs) has attracted much attention because of its potential in electronic device design. The anisotropic Raman scattering and…
Two new Raman modes below 100 cm^-1 are observed in twisted bilayer graphene grown by chemical vapor deposition. The two modes are observed in a small range of twisting angle at which the intensity of the G Raman peak is strongly enhanced,…
Anisotropic two-dimensional (2D) semiconductors recently have emerged as a promising platform for polarization-controlled Raman amplification. In this study, we probe energy-dependent resonant Raman scattering in few layer ReS2 under…
The presence of electron energy loss (EELS) peak is proposed theoretically in molybdenum disulfide (MoS2) nanosheets. Using density functional theory simulations and calculations, one EELS peak is identified in the visible energy range, for…
Two-dimensional (2D) materials beyond graphene such as transition metal dichalcogenides (TMDs) have unique mechanical, optical and electronic properties with promising applications in flexible devices, catalysis and sensing. Optical imaging…