Related papers: Low threshold, room-temperature microdisk lasers i…
Blue light-emitting diodes (LEDs) consisting of a buried n+-p+ GaN tunnel junction, (In,Ga)N multiple quantum wells (MQWs) and a n+-GaN top layer are grown on single-crystal Ga-polar n+-GaN bulk wafers by plasma-assisted molecular beam…
Directional lasing, with a low threshold and high quality factor, in active dielectric nanoantenna arrays is demonstrated. This is achieved through a leaky resonance excited in coupled gallium arsenide (GaAs) nanopillars. The leaky…
Thin film lithium niobate (LN) has recently emerged as a playground for chip-scale nonlinear optics and leads to highly efficient frequency conversions from near infrared to near-visible bands. For many nonlinear and quantum photonics…
Integrated on-chip microdisk lasers have attracted great attention as a light source of compact size, low lasing threshold and narrow bandwidth. However, challenges remain unresolved in terms of single mode operation at high output power…
The influence of the growth conditions as well as the device design on the device performance of (GaIn)As/Ga(AsSb)/(GaIn)As "W"-quantum well lasers is investigated. To this purpose, the epitaxy process is scaled to full two inch substrates…
THz quantum cascade lasers based on a novel buried cavity geometry are demonstrated by combining double-metal waveguides with proton implantation. Devices are realised with emission at 2.8 THz, displaying ultra low threshold currents of 19…
GeSn alloys are the most promising semiconductors for light emitters entirely based on group IV elements. Alloys containing more than 8 at.% Sn have fundamental direct band-gaps, similar to conventional III-V semiconductors and thus can be…
A multiple-graphene-layer (MGL) structure with a stack of GLs and a highly conducting bottom GL on SiC substrate pumped by optical radiation is considered as an active region of terahertz (THz) and far infrared (FIR) lasers with external…
GeSn alloys are promising candidates for complementary metal-oxide-semiconductor (CMOS)-compatible, tunable lasers. Relaxation of residual compressive strain in epitaxial GeSn has recently shown promise in improving the lasing performance.…
We report three-well, resonant-phonon depopulation terahertz quantum cascade lasers with semi-insulating surface-plasmon waveguides and reduced active region (AR) thicknesses. Devices with thicknesses of 10, 7.5, 6, and 5 {\mu}m are…
We report a photonic crystal surface emitting laser using monolayer tungsten disulfide as the gain medium. The cavity design utilizes a heterostructure in the photonic crystal lattice to provide lateral confinement for a high quality factor…
We demonstrate an on-chip Yb3+-doped lithium niobate (LN) microdisk laser. The intrinsic quality factors of the fabricated Yb3+-doped LN microdisk resonator are measured up to 3.79x10^5 at 976 nm wavelength and 1.1x10^6 at 1514 nm…
The thermal gradient along indium-arsenide nanowires was engineered by a combination of fabricated micro- trenches in the supporting substrate and focused laser irradiation. This allowed local control of thermally activated oxidation…
The direct growth of III-V materials on silicon is a key enabler for developing monolithically integrated lasers, offering substantial potential for ultra-dense photonic integration in vital communications and computing technologies.…
Pb-chalcogenide colloidal quantum dots (CQDs) are attractive materials to be used as tuneable laser media across the infrared spectrum. However, excessive nonradiative Auger recombination due to the presence of trap states outcompetes light…
Frequency-agile lasers operating in the ultraviolet-to-blue spectral range (360-480 nm) are critical enablers for a wide range of technologies, including free-space and underwater optical communications, optical atomic clocks, and…
A key component for the realization of silicon-photonics are integrated lasers operating in the important communications band near 1.55 ${\mu}$m. One approach is through the use of GaSb-based alloys which may be grown directly on silicon.…
Semiconductor nanowire lasers can produce guided coherent light emission with miniaturized geometry, bringing about new possibility for a variety of applications including nanophotonic circuits, optical sensing, and on-chip and chip-to-chip…
There is a general trend of downscaling laser cavities, but with high integration and energy densities of nanocavity lasers, signifi-cant thermal issues affect their operation. The complexity of geometrical parameters and the various…
Controlling light-matter interactions in solid-state systems has motivated intense research to produce bosonic quasi-particles known as exciton-polaritons, which requires strong coupling between excitons and cavity photons. Ultra-low…