Related papers: Band engineering in dilute nitride and bismide sem…
We report the graded electronic band gap along the axis of individual heterostructured WZ-ZB InAs/InSb0.12As0.88 nanowires. Resonance Raman imaging has been exploited to map the axial variation in the second excitation gap energy (E1) at…
We report a first-principles study on electronic structures of the deformed armchair graphene nanoribbons (AGNRs). The variation of the energy gap of AGNRs as a function of uniaxial strain displays a zigzag pattern, which indicates that the…
Scaling wide-band-gap semiconductors to the ultrathin limit offers a transformative pathway for power electronics, with gallium nitride (GaN) representing a cornerstone material in this class. However, the operational resilience and…
The realization of a semiconductor near-unity absorber in the infrared will provide new capabilities to transform applications in sensing, health, imaging, and quantum information science, especially where portability is required.…
Bilayer two-dimensional electron systems formed by a thin barrier in the GaAs buffer of a standard heterostructure were investigated by magnetotransport measurements. In magnetic fields oriented parallel to the electron layers, the…
We report comprehensive study of physical properties of the binary superconductor compound SnAs. The electronic band structure of SnAs was investigated using both angle-resolved photoemission spectroscopy (ARPES) in a wide binding energy…
BAs is III-V semiconductor with ultra-high thermal conductivity, but many of its electronic properties are unknown. This work applies predictive atomistic calculations to investigate the properties of BAs heterostructures, such as strain…
Tuning the opto-electronic properties through alloying is essential for semiconductor technology. Currently, mostly isovalent and isostructural alloys are used (e.g., group-IV and III-V), but a vast and unexplored space of novel functional…
The electronic structures of four semiconductor compounds BaCu2S2, BaCu2Se2, BaAg2S2, and BaAg2Se2 are studied by density functional theory using both semi-local and hybrid functionals. The ionization energies and electron affinities were…
We designed Si-based all-dielectric 1 $\times$ 2 TE and TM power splitters with various splitting ratios and simulated them using the inverse design of adjoint and numerical 3D finite-difference time-domain methods. The proposed devices…
A detailed experimental analysis of the impact of active region design on the performance of 1300 nm lasers based on InGaAs/InAlGaAs superlattices is presented. Three different types of superlattice active regions and waveguide layer…
The mobility of graphene is very high because the quantum Hall effects can be observed even at room temperature. Graphene has the potential of the material for novel devices because of this high mobility. But the energy gap of graphene is…
We report on the configurations and electronic properties of graphyne and graphdiyne nanoribbons with armchair and zigzag edges investigated with first principles calculations. Our results show that all the nanoribbons are semiconductors…
The possibility to tune the functional properties of nanomaterials is key to their technological applications. Superlattices, i.e., periodic repetitions of two or more materials in different dimensions are being explored for their potential…
Segregation to defects, in particular to grain boundaries (GBs), is an unavoidable phenomenon leading to changed material behavior over time. With the increase of available computational power, unbiased quantum-mechanical predictions of…
We present a first-principles study of the electronic properties of silicon clathrate nanowires intercalated with various types of alkali or alkaline-earth atoms. We find that the band structure of the nanowires can be tuned by varying the…
Atomically precise graphene nanoribbons are a promising emerging class of designer quantum materials with electronic properties that are tunable by chemical design. However, many challenges remain in the device integration of these…
The InAs/InGaAs DWELL solar cell grown by MBE is a standard pin diode structure with six layers of InAs QDs embedded in InGaAs quantum wells placed within a 200-nm intrinsic GaAs region. The GaAs control wafer consists of the same pin…
AlGaN plays a vital role in hetero-structure high electron mobility transistor by employing a two-dimensional electron gas and as electron blocking layer in the multi quantum well light emitting diodes. Nevertheless, the incorporation of Al…
GeSn alloys are the most promising semiconductors for light emitters entirely based on group IV elements. Alloys containing more than 8 at.% Sn have fundamental direct band-gaps, similar to conventional III-V semiconductors and thus can be…