Related papers: Current-induced synchronized switching of magnetiz…
Electrical manipulation of magnetization is essential for integration of magnetic functionalities such as magnetic memories and magnetic logic devices into electronic circuits. The current induced spin-orbit torque (SOT) in heavy…
Magnetization switching by spin-orbit torque (SOT) via spin Hall effect represents as a competitive alternative to that by spin-transfer torque (STT) used for magnetoresistive random access memory (MRAM), as it does not require high-density…
We have developed a self-aligned, high-yield process to fabricate CPP (current perpendicular to the plane) magnetic sensors of sub 100 nm dimensions. A pinned synthetic antiferromagnet (SAF) is used as the reference layer which minimizes…
Magnetization switching by current-induced spin-orbit torques (SOTs) is of great interest due to its potential applications for ultralow-power memory and logic devices. In order to be of technological interest, SOT effects need to switch…
The current-driven domain wall motion along two exchange-coupled ferromagnetic layers with perpendicular anisotropy is studied by means of micromagnetic simulations and compared to the conventional case of a single ferromagnetic layer. Our…
Via the spin-Hall effect and its inverse, in-plane charge currents in a normal metal$-$ferromagnet (N$|$F) bilayer can be used to excite and detect magnetization dynamics in F. Using a magneto-electric circuit approach, we here consider the…
Current-induced dynamics in spin valves including composite free layer with antiferromagnetic interlayer exchange coupling is studied theoretically within the diffusive transport regime. We show that current-induced dynamics of a synthetic…
We investigate magnetization reversal processes of magnetic nanorings. Using a recently developed efficient cartesian coordinates fast multipole method, magnetization switching phase diagrams are constructed for such structures. We find…
Spin-orbit torque-induced perpendicular magnetization switching has attracted much attention due to the advantages of nonvolatility, high density, infinite read/write counts, and low power consumption in spintronic applications. To achieve…
Optical control of magnetization has emerged as a promising approach to achieve ultrafast and energy-efficient magnetization reversal. Here, we investigate helicity-dependent switching of magnetization driven by the resonant excitation of…
Perpendicularly magnetized structures that are switchable using a spin current under field-free conditions can potentially be applied in spin-orbit torque magnetic random-access memory(SOT-MRAM).Several structures have been…
The effect of undesirable high-frequency free-layer switching in magnetic multilayer systems, referred to as back hopping, is investigated by means of the spin-diffusion model. A possible origin of the back-hopping effect is found to be the…
Our results describe an unprecedented example of change in the mechanism of magnetically-induced electric polarization from spin current to spin-dependent p-d hybridization model. We have followed the evolution of the magnetic structures of…
We study the switching-process of the magnetization in a ferromagnetic-normal-metal multilayer system by a spin polarized electrical current via the spin transfer torque. We use a spin drift-diffusion equation (SDDE) and the…
Spontaneous spin polarization of the electrical current flowing through nonmagnetic semiconductor junctions can be generated by carrier scattering processes that are independent of the carrier spin. The two required elements for…
The prospect of combining the dissipationless nature of superconducting currents with the spin-polarization of magnetic materials is interesting with respect to exploring superconducting analogues of topics in spintronics. In order to…
Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, scaling potential, and power dissipation. However, the major…
We propose a hole-induced mechanism of spin-polarized current generation by circularly polarized synchrotron radiation and corresponding induced magnetization in magnetically-doped topological insulators…
Ferro-valleytricity, a fundamental phenomenon that manifests spontaneous valley polarization, is generally considered to occur in two-dimensional (2D) materials with out-of-plane magnetization. Here, we propose a mechanism to realize…
We report a systematic study of current-induced perpendicular magnetization switching in W/Co$_{x}$Tb$_{1-x}$/Al thin films with strong perpendicular magnetic anisotropy. Various Co$_{x}$Tb$_{1-x}$ ferrimagnetic alloys with different…