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Related papers: Ge condensation under SiGe oxidization: from Molec…

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We performed classical molecular dynamics simulations to investigate, from an atomistic point of view, the formation of dislocations during the epitaxial growth of Ge on Si. We show that simulations at 900 and 1000 K with deposition rates…

Materials Science · Physics 2025-09-19 Luis Martín-Encinar , Luis A. Marqués , Iván Santos , Lourdes Pelaz

The thermal growth of silicon oxide films on Si in dry O2 is modelled as a dynamical system, assuming that it is basically a diffusion-reaction phenomenon. Relevant findings of the last decade are incorporated, as structure and composition…

Materials Science · Physics 2009-10-31 R. M. C. de Almeida , S. Goncalves , I. J. R. Baumvol , F. C. Stedile

(Al,Cr)2O3 coatings with Al/(Al+Cr) = 0.5 or Al = 70 at.%, doped with 0, 5 or 10 at.% Si, were deposited on hard metal and Si(100) substrates to elucidate the influence of Si on the resulting coatings. The chemical analysis of the coatings…

Molecular dynamics and parallel-replica dynamics simulations are applied to investigate the atomic structures and diffusion processes at {\text{Al}\{111\}}\parallel{\text{Si}}\{111\} interphase boundaries constructed by simulated vapor…

Materials Science · Physics 2025-05-13 Yang Li , Raj K. Koju , Yuri Mishin

The report studies transformation of a Ge granular film deposited at room temperature on the Si(001) surface to the Ge/Si(001) heterostructure as a result of rapid heating and annealing at 600C. As a result of the short-term annealing at…

Materials Science · Physics 2016-03-10 M. S. Storozhevykh , L. V. Arapkina , V. A. Yuryev

Metal coordination is ubiquitous in Nature and central in many applications ranging from nanotechnology to catalysis and environmental chemistry. Complex formation results from the subtle interplay between different thermodynamic, kinetic,…

Chemical Physics · Physics 2025-04-30 Luca Sagresti , Luca Benedetti , Kenneth M. Merz , Giuseppe Brancato

Atomistic simulations are used to study linear complexion formation at dislocations in a body-centered cubic Fe-Ni alloy. Driven by Ni segregation, precipitation of the metastable B2-FeNi and stable L10-FeNi phases occurs along the…

Materials Science · Physics 2018-05-11 Vladyslav Turlo , Timothy J. Rupert

We use synthetic sightlines drawn through snapshots of the Technicolor Dawn simulations to explore how the statistics of neutral oxygen OI absorbers respond to hydrogen reionization. The ionization state of the circumgalactic medium (CGM)…

Cosmology and Nongalactic Astrophysics · Physics 2019-08-26 Caitlin Doughty , Kristian Finlator

Using ab initio molecular dynamics (AIMD) simulations, based on density functional theory that also accounts for van der Waals interactions, we study the oxidation of gas phase CO on MoSe$_2$ with a Se vacancy and oxygen coverage of…

Chemical Physics · Physics 2024-11-25 Raúl Bombín , Ricardo Díez Muiño , J. Iñaki Juaristi , Maite Alducin

Condensation of a liquid droplet from a supersaturated vapour phase is initiated by a prototypical nucleation event. As such it is challenging to compute its rate from atomistic molecular dynamics simulations. In fact at realistic…

This paper offers a study of oxygen dissolution into a solid, and its consequences on the mechanical behaviour of the material. In fact, mechanical strains strongly influence the oxidation processes and may be, in some materials,…

Materials Science · Physics 2009-09-17 Nicolas Creton , Virgil Optasanu , Tony Montesin , Sébastien Garruchet

In this work we study the high pressure behaviour of liquid and glassy GeO2 by means of molecular dynamics simulations. The interaction potential, which includes dipole polarization effects, was parameterized from first-principles…

Materials Science · Physics 2010-03-11 Dario Marrocchelli , Mathieu Salanne , Paul A Madden

We report on the origin of high Si flux observed during the use of Si as a doping source in plasma assisted MBE growth of \b{eta}-Ga2O3. We show on the basis of secondary ion mass spectroscopy (SIMS) analysis that Si flux is not limited by…

Ultraviolet nanosecond laser annealing (LA) is a powerful tool where strongly confined heating and melting are desirable. In semiconductor technologies the importance of LA increases with the increasing complexity of the proposed…

We employ molecular dynamic simulations to study the reduction process of graphene-oxide (GO) in a chemically active environment enriched with hydrogen. We examine the concentration and pressure of hydrogen gas as a function of temperature…

Materials Science · Physics 2016-09-28 Ramin M. Abolfath , Kyeongjae Cho

The development of accurate methods for determining how alloy surfaces spontaneously restructure under reactive and corrosive environments is a key, long-standing, grand challenge in materials science. Current oxidation models, such as…

Materials Science · Physics 2023-08-24 Pandu Wisesa , Meng Li , Matthew T. Curnan , Jeong Woo Han , Judith C. Yang , Wissam A. Saidi

A molecular dynamics simulation of SPC/E water confined in a Silica pore is presented. The pore has been constructed to reproduce the average properties of a pore of Vycor glass. Due to the confinement and to the presence of a strong…

Statistical Mechanics · Physics 2007-05-23 P. Gallo , M. Rovere

Enhancing properties and performances of aluminium alloys by a control of their solidification is pivotal in automotive and aerospace industries. The fundamental role of the structure-diffusion relationship is investigated for Al-Mg-Si…

Materials Science · Physics 2023-07-03 Alaa Fahs , Philippe Jarry , Noël Jakse

Thermal stability of hydrogenated amorphous Si/Ge multilayers has been investigated by Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and Small-Angle X-Ray Diffraction (SAXRD) techniques. Amorphous H-Si/Ge…

Materials Science · Physics 2009-02-11 A. Csik , M. Serenyi , Z. Erdelyi , A. Nemcsics , C. Cserhati , G. A. Langer , D. L. Beke , C. Frigeri , A. Simon

Tight binding molecular dynamics simulations, with a non orthogonal basis set, are performed to study the fragmentation of carbon fullerenes doped with up to six silicon atoms. Both substitutional and adsorbed cases are considered. The…

Materials Science · Physics 2009-11-07 Chu-Chun Fu , Javier Fava , Ruben Weht , M. Weissmann