Related papers: Swing switching of spin-torque valves
Magnetic random-access memory (MRAM) driven by spin-transfer torque (STT) is a major contender for future memory applications. The energy dissipation involved in writing remains problematic, even with the advent of more efficient…
We show that magnetization reversal in spin-injection devices can be significantly faster when using a chirped r.f. rather than d.c current pulse. Alternatively one can use a simple sinusoidal r.f. pulse or an optimized series of…
Multiple neuromorphic applications require the tuning of two or more devices to a common signal. Various types of neuromorphic computation can be realized using spintronic oscillators, where the DC current induces magnetization precession,…
We present an optimal field-free protocol for current-induced switching of a perpendicularly magnetized ferromagnetic insulator nanoelement on the surface of a topological insulator. The time dependence of in-plane components of the surface…
We describe spin transfer in a ferromagnet/normal metal/ferromagnet spin-valve point contact. Spin is transferred from the spin-polarized device current to the magnetization of the free layer by the mechanism of incoherent magnon emission…
We numerically study ultra fast resonant spin torque (ST) magnetization reversal in magnetic tunnelling junctions (MTJ) driven by current pulses having a direct current (DC) and a resonant alternating current (AC) component. The…
Spin-orbit torques induced by spin Hall and interfacial effects in heavy metal/ferromagnetic bilayers allow for a switching geometry based on in-plane current injection. Using this geometry, we demonstrate deterministic magnetization…
We propose to accelerate reversal of the ferromagnetic order parameter in spin valves by electronic noise. By solving the stochastic equations of motion we show that the current-induced magnetization switching time is drastically reduced by…
The spin-valve complex magnetoimpedance of symmetric ferromagnet/normal metal/ferromagnet junctions is investigated within the drift-diffusion (standard) model of spin injection. The ac magnetoresistance---the real part difference of the…
Fast magnetization reversal of uniaxial Stoner particles by spin-transfer torque due to the spin-polarized electric current is investigated. It is found that a current with a properly designed time-dependent polarization direction can…
Two promising strategies for achieving efficient control of magnetization in future magnetic memory and non-volatile spin logic devices are spin transfer torque from spin polarized currents and voltage-controlled magnetic anisotropy (VCMA).…
Exploring novel strategies to manipulate the order parameter of magnetic materials by electrical means is of great importance, not only for advancing our understanding of fundamental magnetism, but also for unlocking potential practical…
Current induced spin-orbit torques driven by the conventional spin Hall effect are widely used to manipulate the magnetization. This approach, however, is nondeterministic and inefficient for the switching of magnets with perpendicular…
The spin Hall effect (SHE) generates spin currents within nonmagnetic materials. Previously, studies of the SHE have been motivated primarily to understand its fundamental origin and magnitude. Here we demonstrate, using measurement and…
Magnetization switching due to a current-pulse in symmetric and asymmetric spin valves is studied theoretically within the macrospin model. The switching process and the corresponding switching parameters are shown to depend significantly…
We address optimization of the spin current intensity profile needed to achieve spin torque switching of a nanomagnet. For systems with Ohmic dissipation we prove that the optimal current drives the magnetization along the trajectory, which…
This paper shows that the presence of two dynamical regimes, characterized by different precessional-axis, is the origin of the non-monotonic behavior of the output integrated power for large-amplitude magnetization precession driven by…
In ferromagnetic trilayers, a spin-orbit-induced spin current can have a spin polarization of which direction is deviated from that for the spin Hall effect. Recently, magnetization switching in ferromagnetic trilayers has been proposed and…
We numerically investigate the effect of magnetic and electrical damages at the edge of a perpendicular magnetic random access memory (MRAM) cell on the spin-transfer-torque (STT) efficiency that is defined by the ratio of thermal stability…
The writing energy for reversing the magnetization of the free layer in a magnetic tunnel junction (MTJ) is a key figure of merit for comparing the performances of magnetic random access memories with competing technologies. Magnetization…