Related papers: Carrier-density-controlled anisotropic spin suscep…
We study the dynamical dielectric function of a two-dimensional hole gas, exemplified on [001]-GaAs and InAs quantum wells, within the Luttinger model extended to the two lowest subbands including bulk and structure inversion asymmetric…
Quantum Hall ferromagnetic transitions are typically achieved by increasing the Zeeman energy through in-situ sample rotation, while transitions in systems with pseudo-spin indices can be induced by gate control. We report here a…
Experiments on a constant-density two-dimensional hole system in a GaAs quantum well reveal that the metallic behavior observed in the zero-magnetic-field temperature dependence of the resistivity depends on the symmetry of the confinement…
Hole spins have gained considerable interest in the past few years due to their potential for fast electrically controlled qubits. Here, we study holes confined in Ge hut wires, a so far unexplored type of nanostructure. Low temperature…
We determine the spin susceptibility in a two dimensional electron system in GaAs/AlGaAs over a wide range of low densities from 2$\times10^{9}$cm$^{-2}$ to 4$\times10^{10}$cm$^{-2}$. Our data can be fitted to an equation that describes the…
We demonstrate fully tunable single and double quantum dots in a one-dimensional hole system based on undoped Ge/Si core-shell nanowire heterostructures. The local hole density along the nanowire is controlled by applying voltages to five…
We obtain the spin-orbit interaction and spin-charge coupled transport equations of a two-dimensional heavy hole gas under the influence of strain and anisotropy. We show that a simple two-band Hamiltonian can be used to describe the holes.…
We demonstrate that a lightly-strained germanium channel ($\varepsilon_{//}$ = -0.41%) in an undoped Ge/Si$_{0.1}$Ge$_{0.9}$ heterostructure field effect transistor supports a 2D hole gas with mobility in excess of 1$\times$10$^{6}$…
Gate-controllable spin-orbit coupling is often one requisite for spintronic devices. For practical spin field-effect transistors, another essential requirement is ballistic spin transport, where the spin precession length is shorter than…
An arbitrarily small concentration of impurities can affect the spin Hall conductivity in a two-dimensional semiconductor system. We develop a Boltzmann-like equation that can be used for impurity scattering with arbitrary angular…
We investigate, assess, and suggest possibilities for a measurement of the local spin susceptibility of a conducting low-dimensional electron system. The basic setup of the experiment we envisage is a source-probe one. Locally induced spin…
We present a theoretical study of spin-3/2 hole transport through mesoscopic rings, based on the spherical Luttinger model. The quasi-one-dimensional ring is created in a symmetric two-dimensional quantum well by a singular-oscillator…
The quiet quantum environment of holes in solid-state devices has been at the core of increasingly reliable architectures for quantum processors and memories.1-6 However, due to the lack of scalable materials to properly tailor the valence…
We investigate the properties of natural two-dimensional (2D) magnetoplasma modes in laterally confined electron systems, such as 2D materials, quantum wells, or inversion layers in semiconductors, with an elliptic Fermi surface. The…
We present the findings of the spin-dependent transport of the 2D holes in the p-type ultra-narrow self-assembled silicon quantum well (Si-QW) confined by the superconductor barriers on the n-type Si (100) surface. The Aharonov-Casher…
We propose a quantum stripe (smectic) coupled-Luttinger-liquid model for the anisotropic states which occur in two-dimensional electron systems with high-index partial Landau level filling, $\nu^{*} = \nu - \lbrack\nu\rbrack$. Perturbative…
Spin current of two-dimensional holes occupying the ground-state subband in an asymmetric quantum well and interacting with static disorder potential is calculated in the presence of a weak magnetic field H perpendicular to the well plane.…
We present measurements on gate-defined double quantum dots in Ge-Si core-shell nanowires, which we tune to a regime with visible shell filling in both dots. We observe a Pauli spin blockade and can assign the measured leakage current at…
Motivated by recent experimental reports, we carry out a Fermi liquid many-body calculation of the interaction induced renormalization of the spin susceptibility and effective mass in realistic two dimensional (2D) electron systems as a…
We report on the transport properties of a high mobility two-dimensional hole system (2DHS) confined in GaAs/AlGaAs quantum wells grown molecular-beam epitaxy on the (100) surface of GaAs. The quantum wells are modulation-doped with carbon…