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We demonstrate light-induced localization of Coulomb-interacting particles in multi-dimensional structures. Subwavelength localization of ions within small multi-dimensional Coulomb crystals by an intracavity optical standing wave field is…
We present a computational study of the void-induced microstructure in amorphous silicon ($\it a$-Si) by generating ultra-large models of $\it a$-Si with a void-volume fraction of 0.3$\%$, as observed in small-angle x-ray scattering (SAXS)…
We present direct imaging measurements of charge transport across a 1 cm$\times$ 1 cm$\times$ 4 mm crystal of high purity silicon ($\sim$20 k$\Omega$cm) at temperatures between 500 mK and and 5 K. We use these data to determine the…
The long-timescale behavior of adsorbed carbon monoxide on the surface of amorphous water ice is studied under dense cloud conditions by means of off-lattice, on-the-fly, kinetic Monte Carlo simula- tions. It is found that the CO mobility…
A new scheme for the two-dimensional cooling of ion beams in storage rings is suggested in which ions interact with a counterpropagating broad-band laser beam. The interaction region in the direction of the ion movement is much less then…
Symmetric electron-positron plasmas in inhomogeneous magnetic fields are intrinsically subject to interchange instability and transport. Scaling relations for the propagation velocity of density blob perturbations relevant to transport in…
Atomistic computer simulations are applied to investigate the atomic structure, thermal stability, and diffusion processes in Al-Si interphase boundaries as a prototype of metal-ceramic interfaces in composite materials. Some of the most…
We consider correlation-assisted tunnel ionization of a small molecule by an intense low-frequency laser pulse. In this mechanism, the departing electron excites the state of the ion via a Coulomb interaction. We show that the angular…
Over past decades, high energy X-ray diffraction techniques at synchrotron beamline offer us the unique possibility to follow concomitantly some mechanisms on the grain level in metallic materials. Crystal rotation, as one important factor…
The preferentially (220) orientated polycrystalline silicon films have been fabricated by performing photon-involved rapid thermal annealing upon amorphous silicon films. In contrast, conventional thermal annealing of the silicon amorphous…
A theoretical modeling of the oxygen diffusivity in silicon and germanium crystals both at normal and high hydrostatic pressure has been carried out using molecular mechanics, semiempirical and ab initio methods. It was established that the…
Atoms start behaving as waves rather than classical particles if confined in spaces commensurate with their de Broglie wavelength. At room temperature this length is only about one angstrom even for the lightest atom, hydrogen. This…
Magnetic tunnel junctions with crystalline MgO tunnel barrier and amorphous CoFeB electrodes received much attention due to their high tunnel magneto resistance ratio at room temperature. One important parameter for achieving high tunnel…
The distribution of a suitably defined azimuthal angle in diffractive deep inelastic scattering contains information on the polarisation of the exchanged photon. In particular it allows one to constrain the longitudinal diffractive…
A theory for boson-assisted tunneling via randomly distributed resonant states in a layered metals is developed. As particular examples, we consider the electron-phonon interaction and the interaction between localized and conduction…
This work investigates some aspects of the transport of low-energy positrons in the interstellar medium (ISM). We consider resonance interactions with magnetohydrodynamic waves above the resonance threshold. Below the threshold, collisions…
Secondary Ions Mass Spectroscopy and Hall effect measurements were performed on boron doped silicon with concentration between 0.02 at.% and 12 at.%. Ultra-high boron doping was made by saturating the chemisorption sites of a Si wafer with…
Amorphous silicon materials and its alloys become extensively used in some technical applications involving large area of the microelectronic and optoelectronic devices. However, the amorphous-crystalline transition, segregation and…
The results of XPS core-level and valence band measurements, photoluminescence spectra of a-SiO2 implanted by Zn-ions (E=30 keV, D=1*1017 cm^-2) and Density Functional Theory calculations of electronic structure as well as formation…
We present experimental results on crystal--amorphous transition of forsterite (Mg2SiO4) silicate under ion irradiation. The aim of this work is to study the structural evolution of one of the most abundant crystalline silicates observed in…