Related papers: Experimental observation of the optical spin-orbit…
Field-free switching of perpendicularly magnetized ferromagnetic layer by spin orbit torque (SOT) from the spin Hall effect (SHE) is of great interest in the applications of magnetic memory devices. In this paper, we investigate the…
In recent years, there has been a growing interest in spin-orbit torques (SOTs) for manipulating the magnetization in nonvolatile magnetic memory devices. SOTs rely on the spin-orbit coupling of a nonmagnetic material coupled to a…
The concept of perpendicular shape anisotropy spin-transfer torque magnetic random-access memory (PSA-STT-MRAM) consists in increasing the storage layer thickness to values comparable to the cell diameter, to induce a perpendicular shape…
We formulate a theory of current-induced spin torques in inhomogeneous III-V ferromagnetic semiconductors. The carrier spin-3/2 and large spin-orbit interaction, leading to spin non-conservation, introduce significant conceptual differences…
The injection of spin polarized electrons from ferromagnetic metals (Fe and Co) into gallium nitride (GaN) via scanning tunneling microscopy (STM) is demonstrated. Electrons from STM tips are injected into the semiconductor. Net circular…
We formulate and quantify the spin-orbit torque (SOT) in intrinsic antiferromagnetic topological insulator $\rm MnBi_2Te_4$ of a few septuple-layer thick, which exhibits conspicuous layer-resolved characteristics. Contrary to known…
We study laser-induced torques in bcc Fe, hcp Co and $L1_0$ FePt based on first-principles electronic structure calculations and the Keldysh nonequilibrium formalism. We find that the torques have two contributions, one from the inverse…
The spin-orbit interaction enables interconversion between a charge current and a spin current. It is usually believed that in a nonmagnetic metal (NM) or at a NM/ferromagnetic metal (FM) bilayer interface, the symmetry of spin-orbit…
We discuss methods for imaging the nonequilibrium spin polarization of electrons in Fe/GaAs spin transport devices. Both optically- and electrically-injected spin distributions are studied by scanning magneto-optical Kerr rotation…
We present a scheme of surface-sensitive nuclear magnetic resonance in optically pumped semiconductors, where an NMR signal from a part of the surface of a bulk compound semiconductor is detected apart from the bulk signal. It utilizes…
Arising from the interplay between charge, spin and orbital of electrons, spin-orbit torque (SOT) has attracted immense interest in the past decade. Despite vast progress, the existing quantification methods of SOT still have their…
Non-resonant circularly polarized electromagnetic radiation can exert torques on magnetization by the Inverse Faraday Effect (IFE). Here we discuss the enhancement of IFE by spin-orbit interactions (SOI). We illustrate the principle by…
Recently discovered relativistic spin torques induced by a lateral current at a ferromagnet/paramagnet interface are a candidate spintronic technology for a new generation of electrically-controlled magnetic memory devices.…
We show storage of the circular polarisation of an optical field, transferring it to the spin-state of an individual electron confined in a single semiconductor quantum dot. The state is subsequently readout through the…
Non-equilibrium spin transport in a magnetic tunnel junction comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is studied theoretically. The interfacial SOI generates a spin torque of the form…
The spin flip of the conduction electrons at the interface of a ferromagnetic and a nonmagnetic part of a metallic wire, suspended between two electrodes, is shown to tort the wire when a current is driven through it. In order to enhance…
Selected problems of fundamental importance for spintronics and spin-polarized transport are reviewed, some of them with a special emphasis on their applications in quantum computing and coherent control of quantum dynamics. The role of the…
We present numerical simulation studies of the steady-state magnetization dynamics driven by a spin-polarized current in a point contact geometry for the case of a relatively large contact diameter (D = 80 nm) and small external field (H =…
We propose a field-free switching mechanism that utilizes two spatially orthogonal spin-orbit torque (SOT) currents. Initially applied simultaneously, one of the currents is subsequently switched off. The superposition of these two currents…
Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making it attractive for memory, in-memory computing, and logic applications. However, the…