Related papers: High-frequency gate manipulation of a bilayer grap…
The potential of graphene-based materials consisting of one or a few layers of graphite for integrated electronics originates from the large room-temperature carrier mobility in these systems (approx. 10,000 cm2/Vs). However, the…
A dual-gate graphene field-effect transistors is presented, which shows improved RF performance by reducing the access resistance using electrostatic doping. With a carrier mobility of 2700 cm2/Vs, a cutoff frequency of 50 GHz is…
Electrically controllable quantum coherence in quantum dot clusters and arrays based on graphene stripes with zigzag atomic edges (ZZ-stripes) is studied using the Dirac equation and S-matrix technique. We find that respective multiqubit…
Low-energy electronic structure of (unbiased) bilayer graphene is made of two Fermi points with quadratic dispersions, if trigonal-warping and other high order contributions are ignored. We show that as a result of this qualitative…
The increasing number of qubits in quantum processors necessitates a corresponding increase in the number of control lines between the processor, which is typically operated at cryogenic temperatures, and external electronics. Scaling poses…
The optical response of a heavily doped quantum well, with two occupied subbands, has been investigated as a function of the electronic density. It is shown that the two optically active transitions are mutually coupled by dipole-dipole…
Solid-state qubit manipulation and read-out fidelities are reaching fault-tolerance, but quantum error correction requires millions of physical qubits and thus a scalable quantum computer architecture. To solve signal-line bandwidth and…
We investigate the thermoelectric transport properties of an interacting parallel double quantum dot in the Coulomb-blockade regime. Building on an analytical solution based on an equation-of-motion technique, we extend the formalism for…
Single-qubit operations on singlet-triplet qubits in GaAs double quantum dots have not yet reached the fidelities required for fault-tolerant quantum information processing. Considering experimentally important constraints and using…
Motivated by recent experiments of Zajac et al. [arXiv:1708.03530], we theoretically describe high-fidelity two-qubit gates using the exchange interaction between the spins in neighboring quantum dots subject to a magnetic field gradient.…
We present measurements on spin blockade in a laterally integrated quantum dot. The dot is tuned into the regime of strong Coulomb blockade, confining ~ 50 electrons. At certain electronic states we find an additional mechanism suppressing…
We introduce the 'smooth gate', an entangling method for trapped-ion qubits where residual spin-motion entanglement errors are adiabatically eliminated by ramping the gate detuning. We demonstrate electronically controlled two-qubit gates…
Coulomb blockade is observed in a graphene nanoribbon device with a top gate. When two pn junctions are formed via the back gate and the local top gate, electrons are confined between the pn junctions which act as the barriers. When no pn…
Electron interferometry with quantum Hall edge channels holds promise for probing and harnessing exotic exchange statistics of non-Abelian anyons. In semiconductor heterostructures, however, quantum Hall interferometry has proven…
We present low temperature transport measurements on dual-gated suspended trilayer graphene in the quantum Hall (QH) regime. We observe QH plateaus at filling factors {\nu}=-8, -2, 2, 6, and 10, in agreement with the full-parameter tight…
This is a theoretical study of electron transport in gated bilayer graphene - a novel semiconducting material with a tunable band gap. It is shown that the which-layer pseudospin coherence enhances the subgap conductivity and facilitates…
We demonstrate how using two-qubit composite rotations a high fidelity controlled-NOT (CNOT) gate can be constructed, even when the strength of the interaction between qubits is not accurately known. We focus on the exchange interaction…
Low temperature electron transport measurements of single electron transistors fabricated in advanced CMOS technology with polysilicon gates not only exhibit clear Coulomb blockade behavior but also show a large number of additional…
Silicon quantum dots are attractive candidates for the development of scalable, spin-based qubits. Pauli spin blockade in double quantum dots provides an efficient, temperature independent mechanism for qubit readout. Here we report on…
We investigate the addition spectrum of a graphene quantum dot in the vicinity of the electron-hole crossover as a function of perpendicular magnetic field. Coulomb blockade resonances of the 50 nm wide dot are visible at all gate voltages…