Related papers: A ferroelectric memristor
Reconfigurable memristors featuring neural and synaptic functions hold great potential for neuromorphic circuits by simplifying system architecture, cutting power consumption, and boosting computational efficiency. Their additive…
Memristors stand out as promising components in the landscape of memory and computing. Memristors are generally defined by a conductance equation containing a state variable that imparts a memory effect. The current-voltage cycling causes…
Neuromorphic computing architectures enable the dense co-location of memory and processing elements within a single circuit. This co-location removes the communication bottleneck of transferring data between separate memory and computing…
It is observed that the inductive and capacitive features of the memristor reflect (and are a quintessence of) such features of any resistor. The very presence of the voltage and current state variables, associated by their electrodynamics…
Memristive neural networks (MNNs), which use memristors as neurons or synapses, have become a hot research topic recently. However, most memristors are not compatible with mainstream integrated circuit technology and their stabilities in…
Here we demonstrate that both, tunnel magneto resistance (TMR) and resistive switching (RS), can be observed simultaneously in nano-scale magnetic tunnel junctions. The devices show bipolar RS of 6 % and TMR ratios of about 100 %. For each…
Ferroelectric memristors have attracted much attention as a type of nonvolatile resistance switching memories in neuromorphic computing, image recognition, and information storage. Their resistance switching mechanisms have been studied…
Memristors have been intensively studied in recent years as promising building blocks for next-generation non-volatile memory, artificial neural networks and brain-inspired computing systems. Even though the environment adaptability of…
We discuss the physical properties of realistic memristive, memcapacitive and meminductive systems. In particular, by employing the well-known theory of response functions and microscopic derivations, we show that resistors, capacitors and…
We report a memory resistance (memristor) behavior with nonlinear current-voltage characteristics and bipolar hysteretic resistance switching in the nanocolumnar manganite (LSMO) films. The switching from a high (HRS) to a low (LRS)…
In ferroelectric materials, spontaneous symmetry breaking leads to a switchable electric polarization, which offers significant promise for nonvolatile memories. In particular, ferroelectric tunnel junctions (FTJs) have emerged as a new…
The electrical conductivity of parallel plate capacitors, with ferroelectric lithium niobate as the dielectric layer, can be extensively and progressively modified by the controlled injection of conducting domain walls. Domain wall-based…
Nanoscale metal oxide memristors have potential in the development of brain-inspired computing systems that are scalable and efficient1-3. In such systems, memristors represent the native electronic analogues of the biological synapses.…
Electrical switching has been observed in carefully designed metal-insulator-metal devices built at small geometries. These devices are also commonly known as memristors and consist of specific materials such as transition metal oxides,…
Ferroelectric materials with switchable electric polarization hold great promise for a plethora of emergent applications, such as post-Moore's law nanoelectronics, beyond-Boltzmann transistors, non-volatile memories, and above-bandgap…
Stable and switchable polarization of ferroelectric materials opens a possibility to electrically control their functional behavior. A particularly promising approach is to employ ferroelectric tunnel junctions where the polarization…
Memristors are nonlinear passive circuit elements which can be thought as time varying resistances. When connected in a complex circuit these exhibit very exotic behavior, typical of disordered systems, such as a universal slow relaxation…
Memristors can mimic the functions of biological synapse, where it can simultaneously store the synaptic weight and modulate the transmitted signal. Here, we report Nb/Nb2O5/Pt based memristors with bipolar resistive switching, exhibiting…
A memristor is a two-terminal nanodevice that its properties attract a wide community of researchers from various domains such as physics, chemistry, electronics, computer and neuroscience.The simple structure for manufacturing, small…
Memristors have been positioned at the forefront of the purposes for carrying out neuromorphic computation. Their tuneable conductivity properties enable the imitation of synaptic behaviour. Multipore nanofluidic memristors have shown their…