Related papers: Electric field control of magnetic exchange coupli…
Controlling magnetism by purely electrical means is a key challenge to better information technology1. A variety of material systems, including ferromagnetic (FM) metals2,3,4, FM semiconductors5, multiferroics6,7,8 and magnetoelectric (ME)…
Electric-field driven magnetization switching in FePt/BaTiO$_3$ (001) is demonstrated through first-principles calculations. The magnetic easy axis of FePt layer undergoes a transition from in-plane to perpendicular direction upon…
A common scenario of magnetoelectric coupling in multiferroics is the electric polarization induced by spatially modulated spin structures. It is shown in this paper that the same mechanism works in magnetic dielectrics with inhomogeneous…
The effect of magnetic domain boundaries displacement induced by electric field is observed in epitaxial ferrite garnet films (on substrates with the (210) crystallographic orientation). The effect is odd with respect to the electric field…
The magnetic exchange bias between epitaxial thin films of the multiferroic (antiferromagnetic and ferroelectric) hexagonal YMnO3 oxide and a soft ferromagnetic (FM) layer is used to couple the magnetic response of the ferromagnetic layer…
We consider theoretically the effect of an inhomogeneous magnetoelectric coupling on the magnon-induced dynamics of a ferromagnet. The magnon-mediated magnetoelectric torque affects both the homogeneous magnetization and magnon-driven…
We incorporate single crystal Fe$_3$O$_4$ thin films into a gated device structure and demonstrate the ability to control the Verwey transition with static electric fields. The Verwey transition temperature ($T_V$) increases for both…
An isotropic medium, having magnetic sublevels, when subjected to a magnetic field or an electromagnetic field can induce anisotropy in the medium; and as a result the plane of polarization of the probe field can rotate. Therefore the…
Magnetic ferroelectrics or multiferroics, which are currently extensively explored, may provide a good arena to realize a novel magnetoelectric function. Here we demonstrate the genuine electric control of the spiral magnetic structure in…
Electric-field control of magnetization promises to substantially enhance the energy efficiency of device applications ranging from data storage to solid-state cooling. However, the intrinsic linear magnetoelectric effect is typically small…
Electrical tuning of magnetism is crucial for developing fast, compact, ultra-low power electronic devices. Multiferroics offer significant potential due to their ability to control magnetic via an electric field through magnetoelectric…
Manipulation of the magnetization by external energies other than magnetic field, such as spin-polarized current1-4, electric voltage5,6 and circularly polarized light7-11 gives a paradigm shift in magnetic nanodevices. Magnetization…
We report on the electric field control of magnetic phase transition temperatures in multiferroic Ni3V2O8 thin films. Using magnetization measurements, we find that the phase transition temperature to the canted antiferromagnetic state is…
The external controllability of the magnetic properties in topological insulators would be important both for fundamental and practical interests. Here we predict the electric-field control of ferromagnetism in a thin film of insulating…
Magnetic hysteresis loops show a moderate perpendicular anisotropy of the magnetostrictive CFO pillars, which is related to their vertical compression. The application of an electric field to the electromechanical PMN-PT substrate produced…
Magnetoelectric composites are an important class of multiferroic materials that pave the way towards a new generation of multifunctional devices directly integrable in data storage technology and spintronics. This study focuses on…
Using an electric field instead of an electric current (or a magnetic field) to tailor the electronic properties of magnetic materials is promising for realizing ultralow energy-consuming memory devices because of the suppression of Joule…
All-electrical control of a dynamic magnetoelectric effect is demonstrated in a classical multiferroic manganite DyMnO3, a material containing coupled antiferromagnetic and ferroelectric orders. Due to intrinsic magnetoelectric coupling…
We demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeB magnetic tunnel junctions that is related to the interfacial Fe(Co)Ox formed between the CoFeB electrodes and the MgO barrier. The unique combination of interfacial…
In the past five years, most of the paradigmatic concepts employed in spintronics have been replicated substituting ferromagnets by antiferromagnets in critical parts of the devices. The numerous research efforts directed to manipulate and…