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Related papers: Electronic bands of III-V semiconductor polytypes …

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We report a detailed ab initio study of two superlattice heterostructures, one component of which is a unit cell of CuPt ordered InSb_(0.5)As_(0.5). This alloy part of the heterostructures is a topological semimetal. The other component of…

Materials Science · Physics 2019-01-30 Atanu Patra , Monodeep Chakraborty , Anushree Roy

A study is presented of the electronic band structure and optical absorption spectrum of monolayer WSe$_2$ using an all-electron quasiparticle self-consistent $GW$ approach, QS$G\hat W$, in which the screened Coulomb interaction $\hat W$ is…

Materials Science · Physics 2024-02-29 Niloufar Dadkhah , Walter R. L. Lambrecht

Beta-phase gallium oxide ($\beta$-Ga$_2$O$_3$) research has gained accelerated pace due to its superiorly large bandgap and commercial availability of large-diameter native substrates. However, the high acceptor activation energy obstructs…

Tailoring the specific stacking sequences (polytypes) of layered materials represents a powerful strategy to identify and design novel physical properties. While nanostructures built upon transition-metal dichalcogenides (TMDs) with either…

The electronic structure of In$_{2-x}$V$_x$O$_3$ ($x=0.08$) has been investigated using photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS). The V $2p$ core-level PES and XAS spectra revealed trivalent electronic state…

We propose an efficient reduced-order technique for electronic structure calculations of semiconductor nanostructures, suited for inclusion in full-band quantum transport simulators. The model is based on the linear combination of bulk…

Mesoscale and Nanoscale Physics · Physics 2013-04-04 Francesco Bertazzi , Xiangyu Zhou , Michele Goano , Enrico Bellotti , Giovanni Ghione

Incorporation of bismuth (Bi) in dilute quantities in (In)GaAs has been shown to lead to unique electronic properties that can in principle be exploited for the design of high efficiency telecomm lasers. This motivates the development of…

Materials Science · Physics 2013-09-16 Christopher A. Broderick , Muhammad Usman , Eoin P. O'Reilly

This study presents a refined approach to computing the electronic structure of indium antimonide (InSb) using advanced \textit{ab initio} techniques with the In and Sb $4d^{10}$ semicore electrons included in the valence states. These…

Materials Science · Physics 2025-08-04 Ritwik Das , Anne-Sophie Grimault-Jacquin , Frédéric Aniel

This paper presents a numerical implementation of a first-principles envelope-function theory derived recently by the author [B. A. Foreman, Phys. Rev. B 72, 165345 (2005)]. The examples studied deal with the valence subband structure of…

Materials Science · Physics 2007-07-24 Bradley A. Foreman

We employ first-principles techniques tailored to properly describe semiconductors (modified Becke-Johnson potential added to the exchange-correlation functional), to obtain the electronic band structures of both the zinc-blende and…

Mesoscale and Nanoscale Physics · Physics 2016-10-19 Martin Gmitra , Jaroslav Fabian

Atomic effective pseudopotentials enable atomistic calculations at the level of accuracy of density functional theory for semiconductor nanostructures with up to fifty thousand atoms. Since they are directly derived from ab-initio…

Materials Science · Physics 2024-03-14 Surender Kumar , Hanh Bui , Gabriel Bester

The electronic structure including energy bands, band weights, and local density of states (LDOS) of interfaces between hexagonal (AB) and rhombohedral (ABC) graphite has been has been calculated. The full-potential local-orbital code…

Mesoscale and Nanoscale Physics · Physics 2016-08-03 M. Taut , K. Koepernik

In this work, we performed tight binding calculations of the electronic structure of III-V semiconductors compounds and their alloys based on the Extended H\"uckel Theory (EHT), where the H\"uckel parameters for the binary compounds were…

Materials Science · Physics 2015-06-18 Ingrid A. Ribeiro , Fabio J. Ribeiro , A. S. Martins

For a wide class of technologically relevant compound III-V and II-VI semiconductor materials AC and BC mixed crystals (alloys) of the type A(x)B(1-x)C can be realized. As the electronic properties like the bulk band gap vary continuously…

Materials Science · Physics 2015-06-03 Daniel Mourad , Gerd Czycholl

The electronic band structure of CaSnN$_2$ in the wurtzite-based $Pna2_1$ structure is calculated using the Quasiparticle Self-consistent (QS)GW$^{BSE}$ method, including ladder diagrams in the screened Coulomb interaction W$^{BSE}$ and is…

Materials Science · Physics 2026-04-20 Ilteris K. Turan , Sarker Md. Sadman , Walter R. L. Lambrecht

Quasiparticle calculations are performed to investigate the electronic band structures of various polymorphs of Hf and Zr oxides. The corrections with respect to density-functional-theory results are found to depend only weakly on the…

Materials Science · Physics 2015-05-14 Myrta Grüning , Riad Shaltaf , Gian-Marco Rignanese

The band structure of $\beta$-LiGaO$_2$ is calculated using the quasiparticle self-consistent QS$G\hat W$ method where the screened Coulomb interaction $\hat W$ is evaluated including electron-hole interaction ladder diagrams and $G$ is the…

Materials Science · Physics 2023-04-26 Niloufar Dadkhah , Walter R. L. Lambrecht , Dimitar Pashov , Mark van Schilfgaarde

Investigating Shubnikov-de Haas (SdH) oscillations in high magnetic fields, we experimentally infer the electronic band structure of the quasi-two-dimensional electron gas (2DEG) at the ionic-liquid gated amorphous (a)-LaAlO$_3$/KTaO$_3$…

Materials Science · Physics 2021-09-15 Km Rubi , Shengwei Zeng , Femke Bangma , Michel Goiran , A. Ariando , Walter Escoffier , Uli Zeitler

The recent progress in formation of two-dimensional (2D) GaN by a migration-enhanced encapsulated technique opens up new possibilities for group III-V 2D semiconductors with a band gap within the visible energy spectrum. Using…

Materials Science · Physics 2017-11-01 C. Pashartis , O. Rubel

We report on a theoretical study of the electronic structures of InSb and GaSb nanowires oriented along the [001] and [111] crystallographic directions. The nanowires are described by atomistic, spin-orbit inteaction included, tight-binding…

Mesoscale and Nanoscale Physics · Physics 2015-09-08 Gaohua Liao , Ning Luo , Zhihu Yang , Keqiu Chen , H. Q. Xu
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