Related papers: Electrostatic effects and band-bending in doped to…
The surface states of a topological insulator in a fine-tuned magnetic field are ideal candidates for realizing a topological metal which is protected against disorder. Its signatures are (1) a conductance plateau in long wires in a finely…
Diamond, a well-known wide-bandgap insulator, becomes a low-temperature superconductor upon substitutional doping of carbon with boron. However, limited boron solubility and significant lattice disorder introduced by boron doping prevent…
Topological insulators host spin-polarized surface states born out of the energetic inversion of bulk bands driven by the spin-orbit interaction. Here we discover previously unidentified consequences of band-inversion on the surface…
Electronic band structures usually remain unaffected by doping via a chemical-potential shift or by increasing the temperature in conventional band insulators. In contrast, it has been shown that those of Mott and Kondo insulators can be…
We investigate the effect of a crystal edge dislocation on the metallic surface of a Topological Insulator. The edge dislocation gives rise to torsion which the electrons experience as a spin connection. As a result the electrons propagate…
Kondo insulators combine strong electronic correlations with spin orbit coupling and thereby provide a potential realization of correlated topological insulators. We present model calculations which allow us to study the onset of bulk…
To harness the true potential of topological insulators as quantum materials for information processing, it is imperative to maximise topological surface state conduction, while simulateneously improving their quantum coherence. However,…
Topological insulators (TIs) are novel materials that manifest spin-polarized Dirac states on their surfaces or at interfaces made with conventional matter. We have measured the electron kinetics of bulk doped TI Bi$_2$Se$_3$ with angle…
We theoretically consider temperature and density-dependent electron-phonon interaction induced many-body effects in the two-dimensional (2D) metallic carriers confined on the surface of the 3D topological insulator (e.g. Bi$_2$Se$_3$). We…
The characteristics of topological insulators are manifested in both their surface and bulk properties, but the latter remain to be explored. Here we report bulk signatures of pressure-induced band inversion and topological phase…
We report transport studies on (Bi,Sb)2Te3 topological insulator thin films with tunable electronic band structure. We find a doping and temperature regime in which the Hall coefficient is negative indicative of electron-type carriers,…
Spin-orbit coupled materials have attracted revived prominent research interest as of late, especially due their direct connection with topological notions. Arguably, a hallmark of this pursuit is formed by the concept of the topological…
The electronic structure at the interface between a topological band insulator and a Mott insulator is studied within layer dynamical mean field theory. To represent the bulk phases of these systems, we use the generalized…
We report the observation of electric-field-induced superconductivity on the surface of bulk polycrystalline MoS2 using electric double-layer doping. A gate voltage applied in an ionic liquid environment systematically increased carrier…
Topological insulators are bulk semiconductors that manifest in-gap massless Dirac surface states due to the topological bulk-boundary correspondence principle [1-3]. These surface states have been a subject of tremendous ongoing interest,…
We investigated the magnetotransport properties of Fe-doped topological insulator Sb1.96 Fe0.04Te3 single crystals. With doping, the band structure changes significantly and multiple Fermi pockets become evident in the Shubnikov-de Haas…
Monolayer TaIrTe$_4$ has emerged as an attractive material platform to study intriguing phenomena related to topology and strong electron correlations. Recently, strong interactions have been demonstrated to induce strain and dielectric…
Three-dimensional topological insulators harbour metallic surface states with exotic properties. In transport or optics, these properties are typically masked by defect-induced bulk carriers. Compensation of donors and acceptors reduces the…
This study examines electrostatic screening effects in graphene using tight binding calculations based on the Binding energy and Bond Charge model and a modified version of it. The results indicate that the modified BBC potential decays in…
We investigate the influence of an unoccupied band on the transport properties of a strongly correlated electron system. For that purpose, additional orbitals are coupled to a Hubbard model via hybridization. The filling is one electron per…