Related papers: Fourier Response of a Memristor: Generation of Hig…
While resistors with memory, sometimes called memristive elements (such as ReRAM cells), are often studied under conditions of periodic driving, little attention has been paid to the Fourier features of their memory response (hysteresis).…
A memristor is often identified by showing its distinctive pinched hysteresis curve and testing for the effect of frequency. The hysteresis size should relate to frequency and shrink to zero as the frequency approaches infinity. Although…
We discuss the memristive fingerprints of the hybrid Cassie-Mayr model of electric arcs. In particular, it is shown that (i) the voltage-current characteristic of the model has the pinched hysteresis nature, (ii) the voltage and current…
This work identifies the general approach for linearising any power system component in the harmonic domain, that is with respect to its Fourier series coefficients. This ability enables detailed harmonic analysis, and is key as more power…
Memristors have pinched hysteresis loops in the $V-I$ plane. Ideal memristors are everywhere non-linear, cross at zero and are rotationally symmetric. In this paper we extend memristor theory to produce different types of non-ideality and…
It is shown that virtually all nonlinear and/or time-varying loads that generate harmonic current distortion can be characterized in terms of so-called higher-order circuit elements. The most relevant higher-order elements exploited in this…
Nonlinearity is a crucial characteristic for implementing hardware security primitives or neuromorphic computing systems. The main feature of all memristive devices is this nonlinear behavior observed in their current-voltage…
Memristors are expected to form a major cornerstone in the upcoming renaissance of analog computing, owing to their very small spatial footprint and low power consumption. Due to the nature of their structure and operation, the response of…
PrMnO$_3$ (PMO) based RRAM shows selector-less behavior due to high-non-linearity. Recently, the non-linearity, along with volatile hysteresis, is demonstrated and utilized as a compact oscillator to enable highly scaled oscillatory…
There are essential achievements in synthesis of interesting for creation of compact electronic memory switched by own current structures of spin valves and magnetic tunnel junctions with hysteretic current dependences of resistance. In the…
Motivated by advantages of current-mode design, this brief contribution explores the implementation of weight matrices in neuromemristive systems via current-mode memristor crossbar circuits. After deriving theoretical results for the range…
A stochastic energetics framework is applied to examine how periodically shifting the frequency of a time-dependent oscillating temperature gradient affects heat transport in a nanoscale molecular model. We specifically examine the effects…
Memristors stand out as promising components in the landscape of memory and computing. Memristors are generally defined by a conductance equation containing a state variable that imparts a memory effect. The current-voltage cycling causes…
We have carried out calculations of current-voltage characteristics for the electron tunnel current through a junction with a thin insulating ferroelectric barrier assuming that interface transmissions for the left and right interfaces…
We measure current fluctuations of mesoscopic devices in the quantum regime, when the frequency is of the order of or higher than the applied voltage or temperature. Detection is designed to probe separately the absorption and emission…
Memristors provide a tempting solution for weighted synapse connections in neuromorphic computing due to their size and non-volatile nature. However, memristors are unreliable in the commonly used voltage-pulse-based programming approaches…
There are certain classes of resistors, capacitors and inductors that, when subject to a periodic input of appropriate frequency, develop hysteresis loops in their characteristic response. Here, we show that the hysteresis of such memory…
Accurate modeling of magnetic hysteresis is essential for high-fidelity power electronics device simulations. The transient hysteresis phenomena such as the ringing effect and the minor loops are the bottleneck for the accurate hysteresis…
Theory of current hysteresis for tunneling through a molecular quantum dot (MQD) with strong electron-vibron interactions and attractive electron-electron correlations is developed. The dot is modeled as a d-fold degenerate energy level…
Reasoned by its dynamical behavior, the memristor enables a lot of new applications in analog circuit design. Since some realizations are shown (e.g. 2007 by Hewlett Packard), the development of applications with memristors becomes more and…