Related papers: Diffusion at the Surface of Topological Insulators
We propose to Floquet-engineer Dirac cones at the surface of a three-dimensional topological insulator. We show that a large tunability of the Fermi velocity can be achieved as a function of the polarization, direction and amplitude of the…
Three-dimensional doped Dirac insulators foster simply connected (in both topological and trivial regimes) and annular (deep inside the topological regime) Fermi surfaces (FSs) in the normal state, and allow on-site repulsions among…
The thermoelectric response of 80-nm-thick strained HgTe films of a three-dimensional topological insulator (3D TI) has been studied experimentally. An ambipolar thermopower is observed where the Fermi energy moves from conducting to the…
The hexagonal warping effect on transport properties and Goos-H\"anchen (GH) lateral shift of electrons on the surface of a topological insulator with a potential barrier is investigated theoretically. Due to the warped Fermi surface for…
We present a theoretical investigation of the surface plasmon (SP) at the interface between topologically non-trivial cylindrical core and topological-trivial surrounding material, from the axion electrodynamics and modified constitutive…
The universal conductance fluctuations (UCFs), one of the most important manifestations of mesoscopic electronic interference, have not yet been demonstrated for the two-dimensional surface state of topological insulators (TIs). Even if one…
From the analysis of the cyclotron resonance, we experimentally obtain the band structure of the three-dimensional topological insulator based on a HgTe thin film. Top gating was used to shift the Fermi level in the film, allowing us to…
The angular-dependent magnetoresistance and the Shubnikov-de Haas oscillations are studied in a topological insulator Bi_{0.91}Sb_{0.09}, where the two-dimensional (2D) surface states coexist with a three-dimensional (3D) bulk Fermi surface…
Three-dimensional topological insulators and topological crystalline insulators represent new quantum states of matter, which are predicted to have insulating bulk states and spin-momentum-locked gapless surface states. Experimentally, it…
Thermoelectric (TE) devices have been attracting increasing attention because of their ability to convert heat directly to electricity. To date, improving the TE figure of merit remains the key challenge. The advent of the topological…
We study Bi2Se3 by polarization-dependent angle-resolved photoemission spectroscopy (ARPES) and density-functional theory slab calculations. We find that the surface state Dirac fermions are characterized by a layer-dependent entangled…
We report a detailed experimental study of the band structure of the recently discovered topological material $\textrm{Hf}_{2}\textrm{Te}_2\textrm{P}$. Using the combination of scanning tunneling spectroscopy and angle-resolved…
In two-dimensional Fermi liquids (FLs), odd-parity Fermi surface deformations have anomalously slow relaxation rates that are suppressed as $T^4$ with temperature $T$, distinct from the standard FL $T^2$ scaling. We demonstrate here that…
Spin-orbit interaction affects the band structure of topological insulators beyond the opening of an inverted gap in the bulk bands, and the understanding of its effects on the surface states is of primary importance to access the…
Scanning tunneling microscopy and spectroscopy have been used to investigate the femtosecond dynamics of Dirac fermions in the topological insulator Bi$_2$Se$_3$ ultrathin films. At two-dimensional limit, bulk electrons becomes quantized…
A key challenge in condensed matter research is the optimization of topological insulator (TI) compounds for the study and future application of their unique surface states. Truly insulating bulk states would allow the exploitation of…
Heteroepitaxial structures based on Bi$_{2}$Te$_{3}$-type topological insulators (TIs) exhibit exotic quantum phenomena. For optimal characterization of these phenomena, it is desirable to control the interface structure during film growth…
Topological insulators are new states of quantum matter which can not be adiabatically connected to conventional insulators and semiconductors. They are characterized by a full insulating gap in the bulk and gapless edge or surface states…
Gated terahertz cyclotron resonance measurements on epitaxial Bi2Se3 thin films capped with In2Se3 enable the first spectroscopic characterization of a single topological interface state from the vicinity of the Dirac point to above the…
Topological insulators are a new class of materials which have gapped spectra in the bulk, but are accompanied by topologically protected gapless excitations at the surface (edge) of the system. These phenomena have a close relationship…