Related papers: Measuring roughness of buried interfaces by sputte…

We report results of high-resolution TOF SIMS (time of flight secondary ion mass spectrometry) depth profiling experiments on a nanolayered structure, a stack of 16 alternating MgO and ZnO ~5.5 nm layers grown on a Si substrate by atomic…

Depth profiling of thin films by inert gas sputtering is one of the most important applications of Auger electron spectroscopy and X-ray photoelectron spectroscopy. Such an analysis monitors the elemental in-depth composition of the thin…

The ZnO films, 25 nm thick were deposited by e-beam evaporation of ZnO (99.9%) pellets onto native oxide covered silicon (100) substrates. Details of the interface chemical composition and the chemical depth profile have been deduced as…

The continuous technological development of electronic devices and the introduction of new materials leads to ever greater demands on the fabrication of semiconductor heterostructures and their characterization. This work focuses on…

Atomic force microscopy (AFM) is a well-known tool for studying surface roughness and to collect depth information about features on the top atomic layer of samples. By combining secondary ion mass spectroscopy (SIMS) with focused ion beam…

New developments in quantitative sputter depth profiling during the past ten years are reviewed, with special emphasis on the experimental achievement of ultrahigh depth resolution (below 2 nm for sputtered depths larger than 10 nm). In…

Application of the so called mxing-roughness-information depth (MRI)-model to the quantitative reconstruction of the in-depth distribution of composition is demonstrated by comparing SIMS and AES depth profiles. A GaAs/AlAs reference sample…

Quantification of Ge in Si1-xGex structures (0.092<x<0.78) was carried by time-of-flight secondary ion mass spectrometry (TOF-SIMS) and electron-gas secondary neutral mass spectrometry (SNMS). A good linear correlation (R2>0.9997) of…

We introduce new models that incorporate layer corrugation and interface roughness into standard approaches for measuring interface stress in nanomultilayers (NMLs). Applied to Cu/W NMLs, these models show that ignoring such features can…

Semiconductive ZnO has shown to be a fascinating element for application in high-performance sensors. ZnO with various thicknesses (87-500 nm) was deposited on the surface of Co-based amorphous micro-wire (Co68.15Fe4.35Si12.5B15) using…

We investigate the use of Low Energy Ion Scattering (LEIS) to characterize buried interfaces of ultra-thin films. LEIS spectra contain depth-resolved information in the so-called sub-surface signal. However, the exact correlation between…

The overall quality of multilayer thin films prepared by electrodeposition is strongly influenced by the surface and interface roughness which increases with the layer number. For that very reason the reliable analysis of the first few…

The ability to tune electronic structure in twisted stacks of two-dimensional (2D) materials has motivated the exploration of similar moir\'e physics with twisted oxide membranes. Due to the intrinsic three-dimensional nature of bonding in…

Interfaces govern the unique mechanical response of amorphous multilayers. Here, we examine nanoindentation hardness and deformation behaviour of amorphous-amorphous Ta$_2$O$_5$/SiO$_2$ nanolaminates with bilayer thicknesses ranging from 2…

Understanding the interfaces of layered nanostructures is key to optimizing their structural and magnetic properties for the desired functionality. In the present work, the two interfaces of a few nm thick Fe layer in Ag-57Fe-Ag trilayers…

By knowing the phase and modules of the reflection coefficient in neutron reflectometry problems, a unique result for the scattering length density (SLD) of a thin film can be determined which will lead to the exact determination of type…

A set of Mo/Si periodic multilayers is studied by non destructive analysis methods. The thickness of the Si layers is 5 nm while the thickness of the Mo layers changes from one multilayer to another, from 2 to 4 nm. This enables us to probe…

The semiconductor-metal junction is one of the most critical factors for high performance electronic devices. In two-dimensional (2D) semiconductor devices, minimizing the voltage drop at this junction is particularly challenging and…

We combine $^{57}$Fe M\"ossbauer spectroscopy and $^{57}$Fe nuclear resonant inelastic x-ray scattering (NRIXS) in nanoscale polycrystalline [bcc-$^{57}$Fe/MgO] multilayers with various Fe layer thicknesses and layer-resolved…

We simulated and experimentally investigated the sputter yield of ZnO and GaAs nanowires, which were implanted with energetic Mn ions at room temperature. The resulting thinning of the nanowires and the dopant concentration with increasing…