Related papers: Valley and spin polarization from graphene line de…
We calculate the electrical and thermal conductivity of a two-dimensional electron gas with strong spin--orbit coupling in which the scattering is dominated by electron--electron collisions. Despite the apparent absence of Galilean…
We address spin polarization dependence of graphene's Fermi liquid properties quantitatively using a microscopic Random Phase Approximation theory in an interacting spin-polarized Dirac electron system. We show an enhancement of the…
Real-world samples of graphene often exhibit various types of out-of-plane disorder -- ripples, wrinkles and folds -- introduced at the stage of growth and transfer processes. These complex out-of-plane defects resulting from the interplay…
The problem of electron scattering on the one-dimensional complexes is considered. We propose a novel theoretical approach to solution of the transport problem for a quantum graph. In the frame of the developed approach the solution of the…
We present a formal derivation of a drift-diffusion model for stationary electron transport in graphene, in presence of sharp potential profiles, such as barriers and steps. Assuming the electric potential to have steep variations within a…
The specific band structure of graphene, with its unique valley structure and Dirac neutrality point separating hole states from electron states has led to the observation of new electronic transport phenomena such as anomalously quantized…
An existence of predominant symmetrical spin configuration (spin polarised phase) and "diluted" density of states (pseudo-gap) in a layer under the Fermi level in a quantum wire is predicted. The condition of cross-over from non-polarised…
We investigate a valleytronic device based on graphene with charge separation at different sublattices and correspondingly at nonequivalent valleys. We characterize the maximality condition of valley polarization and investigate the…
Atomically precise tailoring of graphene can enable unusual transport pathways and new nanometer-scale functional devices. Here we describe a recipe for the controlled production of highly regular "5-5-8" line defects in graphene by means…
Inspired by the problem of elastic wave scattering on wrinkled interfaces, we studied the scattering of ballistic electrons on a wrinkled potential energy region. The electron transmission coefficient depends on both wrinkle amplitude and…
The polarization of radiation by scattering on an atom embedded in combined external quadrupole electric and uniform magnetic fields is studied theoretically. Limiting cases of scattering under Zeeman effect and Hanle effect in weak…
Graphene subject to high levels of shear strain leads to strong pseudo-magnetic fields resulting in the emergence of Landau levels. Here we show that, with modest levels of strain, graphene can also sustain a classical valley hall effect…
We present a theoretical study on the electron transmission through the AB-BA stacking boundary in multilayer graphene. Using the tight-binding model and the transfer matrix method, we calculate the electron transmission probability through…
We propose a directional switching effect in a metallic device. To such end we exploit a graphene-based device with a three-terminal geometry in the presence of a magnetic field. We show that unidirectional charge and valley currents can be…
We consider tunneling transport between two parallel graphene sheets where one is a single-layer sample and the other one a bilayer. In the presence of an in-plane magnetic field, the interplay between combined energy and momentum…
The theoretical results are presented showing that strain-induced anisotropy of graphene spectrum gives rise to the valley currents under the illumination by normally incident light. The currents of the two graphene valleys are mutually…
Photon-assisted electron transport in ballistic graphene is analyzed using scattering theory. We show that the presence of an ac signal (applied to a gate electrode in a region of the system) has interesting consequences on electron…
We analyze spin scattering in ballistic transport of electrons through a ripple at a normal incidence of an electron flow. The model of a ripple consists of a curved graphene surface in the form of an arc of a circle connected from the…
We report on transport measurements of dual-gated, single-layer graphene devices in the quantum Hall regime, allowing for independent control of the filling factors in adjoining regions. Progress in device quality allows us to study…
We report on the emergence of bulk, valley-polarized currents in graphene-based devices, driven by spatially varying regions of broken sublattice symmetry, and revealed by non-local resistance ($R_\mathrm{NL}$) fingerprints. By using a…