Related papers: Probing individual layers in functional oxide mult…
We examine how the misorientation of a few stacked graphene layers affects the electronic structure of carbon nanosystems. We present {\it ab initio} calculations on bi- and trilayer systems to demonstrate that the massless Fermion behavior…
In ionic Raman scattering, infrared-active phonons mediate a scattering process that results in the creation or destruction of a Raman-active phonon. This mechanism relies on nonlinear interactions between phonons and has in recent years…
We perform tunable resonant Raman scattering on 17 semiconducting and 7 metallic singly resonant single wall carbon nanotubes. The measured scattering cross-section as a function laser energy provides information about a tube's electronic…
The interest of micro and tip-enhanced Raman spectroscopy to analyze nanosized and nanostructured materials, chiefly semiconductors, oxides and pristine or functionalized carbon nanotubes, is reviewed at the light of the contributions to…
Photonics caught world attention since channel capacity limit of metallic interconnects approached due to research and design in high speed digital processors. Use of dielectrics, instead, suitable for light propagation was more attractive…
In order to deepen in the knowledge of the vibrational properties of 2-dimensional MoS2 atomic layers, a complete and systematic Raman scattering analysis has been performed using both bulk single crystal MoS2 samples and atomically thin…
Graphite is a well-studied material with known electronic and optical properties. Graphene, on the other hand, which is just one layer of carbon atoms arranged in a hexagonal lattice, has been studied theoretically for quite some time but…
The Raman spectrum and particularly the Raman scattering intensities of monoclinic $\beta\text{-Ga}_2\text{O}_3$ are investigated by experiment and theory. The low symmetry of $\beta\text{-Ga}_2\text{O}_3$ results in a complex dependence of…
The symmetry group analysis is applied to classify the phonon modes of $N$-stacked graphene layers (NSGL's) with AB- and AA-stacking, particularly their infra-red and Raman properties. The dispersions of various phonon modes are calculated…
Layered materials such as graphite and transition metal dichalcogenides have extremely anisotropic mechanical properties owing to orders of magnitude difference between in-plane and out-of-plane interatomic interaction strengths. Although…
We report multiphonon Raman scattering in graphene samples. Higher order combination modes involving 3 phonons and 4 phonons are observed in single-layer (SLG), bi-layer (BLG), and few layer (FLG) graphene samples prepared by mechanical…
We report a Raman scattering study of polycrystalline CaCu$_3$Ti$_4$O$_{12}$ (CCTO) under pressure up to 5.32 GPa. The pressure dependence of several Raman modes was investigated. No anomalies have been observed on the phonon spectra…
Iron-based superconducting layered compounds have the second highest transition temperature after cuprate superconductors. Their discovery is a milestone in the history of high-temperature superconductivity and will have profound…
Stimulated low frequency Raman scattering (SLFRS) in single-crystal diamond films (SCD) with a graphitized layer built-in is investigated. SLFRS process in all studied structures has frequency shift in gigahertz range (5.1-13.2 GHz).…
Intentionally deposited thin films exposed to atmosphere often develop unintentionally deposited few monolayer films of surface contamination. This contamination arises from the diverse population of volatile organics and inorganics in the…
Bulk amorphous materials have been studied extensively and are widely used, yet their atomic arrangement remains an open issue. Although they are generally believed to be Zachariasen continuous random networks, recent experimental evidence…
We report a detailed experimental and theoretical investigation of the effect of residual strain, and strain relaxation, which manifests itself at the Si/SiO$_{2}$ interfaces in commercial silicon-on-insulator (SOI) wafers. SOI material is…
Raman spectroscopy has been used to identify defective bonding in neon and silicon ion irradiated single crystals of 6H-SiC. Observable differences exist in the C-C bonding region corresponding to different defect structures for neon and…
As the silicon industry continues to push the limits of device dimensions, tools such as Raman spectroscopy are ideal to analyze and characterize the doped silicon channels. The effect of inter-valence band transitions on the zone center…
Raman spectroscopy is an integral part of graphene research. It is used to determine the number and orientation of layers, the quality and types of edge, and the effects of perturbations, such as electric and magnetic fields, strain,…