Related papers: Three-dimensional bulk band dispersion in polar Bi…
It was recently shown that BiTeI, a semiconductor with polar crystal structure, possesses a giant spin-splitting of electrons, which has been interpreted in terms of Rashba-type spin-orbit coupling. Here, we use high field magneto-optical…
The Rashba effect is one of the most striking manifestations of spin-orbit coupling in solids, and provides a cornerstone for the burgeoning field of semiconductor spintronics. It is typically assumed to manifest as a momentum-dependent…
We theoretically propose the necessary conditions for realization of giant Rashba splitting in bulk systems. In addition to (i) the large atomic spin-orbit interaction in an inversion-asymmetric system, the following two conditions are…
We investigate the two-dimensional (2D) highly spin-polarized electron accumulation layers commonly appearing near the surface of n-type polar semiconductors BiTeX (X = I, Br, and Cl) by angular-resolved photoemission spectroscopy. Due to…
We observe a giant spin-orbit splitting in bulk and surface states of the non-centrosymmetric semiconductor BiTeI. We show that the Fermi level can be placed in the valence or in the conduction band by controlling the surface termination.…
We use polarization resolved Raman spectroscopy to demonstrate that for a 3D giant Rashba system the bulk plasmon collective mode can directly couple to the Raman response even in the long wavelength $\mathbf q \rightarrow 0$ limit.…
We performed temperature dependent infrared spectroscopy measurements on BiTeI single crystals, which exhibit large Rashba spin-splitting. Similar to a previous optical study, we found electronic excitations in good agreement with…
We study the electronic and spin structures of the giant Rashba-split surface states of the Bi/Si(111)-($\sqrt{3} \times \sqrt{3}$)R30 trimer phase by means of spin- and angle-resolved photoelectron spectroscopy (spin-ARPES). Supported by…
Rashba spin splitting in two-dimensional (2D) semiconductor systems is generally calculated in a ${\bf k} \cdot {\bf p}$ Luttinger-Kohn approach where the spin splitting due to asymmetry emerges naturally from the bulk band structure. In…
BiTeI is a polar semiconductor with strong spin-orbit coupling (SOC) that produces large Rashba spin splitting. Due to its potential utility in spintronics and magnetoelectrics, it is essential to understand how defects impact the spin…
We study the magneto-optical (MO) response of polar semiconductor BiTeI with giant bulk Rashba spin splitting at various carrier densities. Despite being non-magnetic, the material is found to yield a huge MO activity in the infrared region…
Experimentally it is still challenging to epitaxially grow Bi(111) bilayer (BL) on conventional semiconductor substrate. Here, we propose a substrate of $\beta-$In$_2$Se$_3$(0001) with van der Waals like cleavage and large band gap of…
Two-dimensional materials with Rashba split bands near the Fermi level are key to developing upcoming next-generation spintronics. They enable generating, detecting, and manipulating spin currents without an external magnetic field. Here,…
The spin-orbit interaction affects the electronic structure of solids in various ways. Topological insulators are one example where the spin-orbit interaction leads the bulk bands to have a non-trivial topology, observable as gapless…
The non-centrosymmetric semiconductor BiTeI exhibits two distinct surface terminations that support spin-split Rashba surface states. Their ambipolarity can be exploited for creating spin-polarized $p$-$n$ junctions at the boundaries…
Spin-orbit coupling (SOC) has gained much attention for its rich physical phenomena and highly promising applications in spintronic devices. The Rashba-type SOC in systems with inversion symmetry breaking is particularly attractive for…
The electronic band structure and Fermi surface of ZrTe_3 was precisely determined by linearly polarized angle-resolved photoelectron spectroscopy. Several bands and a large part of the Fermi surface are found to be split by 100-200 meV…
Spintronics is aimed at active controlling and manipulating the spin degrees of freedom in semiconductor devices. A promising way to achieve this goal is to make use of the tunable Rashba effect that relies on the spin-orbit interaction…
3D Rashba materials can be a leading player in spin-related novel phenomena, ranging from the metallic extreme (unconventional superconductivity) to the transport intermediate (spin Hall effects) to the novel insulating variant (3D…
Electronic states on the Bi/InAs(110)-(2$\times$1) surface and its spin-polarized structure are revealed by angle-resolved photoelectron spectroscopy (ARPES), spin-resolved ARPES, and density-functional-theory calculation. The surface state…