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This work demonstrates a large area process for atomically thin 2D semiconductors to unlock the technological upscale required for their commercial uptake. The new atomic layer deposition (ALD) and conversion technique yields large area…

We report observation of electron helical dichroism on a material with chiral structure. In analogy with circular dichroism, a common technique for molecular structural fingerprinting, we use a nanofabricated forked diffraction grating to…

Materials Science · Physics 2015-07-08 Tyler R. Harvey , Jordan S. Pierce , Jordan J. Chess , Benjamin J. McMorran

Coating metal nanotips with a negative electron affinity material like hydrogen-terminated diamond bears promise for a high brightness photocathode. We report a recipe on the fabrication of diamond coated tungsten tips. A tungsten wire is…

Materials Science · Physics 2019-02-05 Alexander Tafel , Mingjian Wu , Erdmann Spiecker , Peter Hommelhoff , Juergen Ristein

Memristors, when utilized as electronic components in circuits, can offer opportunities for the implementation of novel reconfigurable electronics. While they have been used in large arrays, studies in ensembles of devices are comparatively…

Applied Physics · Physics 2022-04-06 Vasileios Manouras , Spyros Stathopoulos , Alex Serb , Themis Prodromakis

Density functional theory calculations are used to show that it is possible to dope semiconducting transition metal dichalcogenides (TMD) such as MoS$_2$ and WS$_2$ with electrons and/or holes either by chemical substitution or by…

Mesoscale and Nanoscale Physics · Physics 2014-09-16 A. Carvalho , A. H. Castro Neto

SrTiO$_{3}$ is one of the most popular insulating single-crystal substrates for various complex-oxide thin film growths, because of its good lattice match with many complex oxide films. Here, we show that a common thin film processing…

Materials Science · Physics 2011-10-11 Heiko Gross , Namrata Bansal , Yong-Seung Kim , Seongshik Oh

Two-dimensional crystals have emerged as a new class of materials with novel properties that may impact future technologies. Experimentally identifying and characterizing new functional two-dimensional materials in the vast material pool is…

Materials Science · Physics 2015-06-18 Likai Li , Yijun Yu , Guo Jun Ye , Qingqin Ge , Xuedong Ou , Hua Wu , Donglai Feng , Xian Hui Chen , Yuanbo Zhang

Transmission electron beams (TEBs) have long been used to study and manipulate materials at nanometer scales. In the late 1970's, Cherns demonstrated surface pitting in Au films upon exposure to a 1MeV TEB and observed crystal dislocations…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 M. D. Fischbein , M. Drndic

Molybdenum disilicide (MoSi$_2$) is a very promising material for high temperature structural applications due to its high melting point (2030 {\deg}C), low density, high thermal conductivity and good oxidation resistance. However, MoSi$_2$…

We suggest electronic circuits with memristors (resistors with memory) that operate as memcapacitors (capacitors with memory) and meminductors (inductors with memory). Using a memristor emulator, the suggested circuits have been built and…

Instrumentation and Detectors · Physics 2014-11-20 Yuriy V. Pershin , Massimiliano Di Ventra

We suggest an approach to use memristors (resistors with memory) in programmable analog circuits. Our idea consists in a circuit design in which low voltages are applied to memristors during their operation as analog circuit elements and…

Instrumentation and Detectors · Physics 2014-11-20 Yuriy V. Pershin , Massimiliano Di Ventra

A simple and highly reproducible technique is demonstrated for the fabrication of metallic electrodes with nanometer separation. Commercially available bare gold colloidal nanoparticles are first trapped between prefabricated…

Mesoscale and Nanoscale Physics · Physics 2009-11-07 Saiful I. Khondaker , Zhen Yao

Current memcapacitor implementations typically demand complex fabrication processes or depend on organic materials exhibiting poor environmental stability and reproducibility. Here, we demonstrate memcapacitor structures utilizing a quasi…

We report the obtaining and primary studies of ~ 250microns thick multi-layer Ti-based protective coating deposited at high cooling rate from substance generated by cathode arc discharge in vacuum. High adhesion to steel substrate was…

A review of electronic properties of insulating-, boron- and phosphorus-doped diamond is given. The main goal is, to show data in a wider context, to reveal trends and limitations with respect to carrier mobilities, conductivities, p- and…

Materials Science · Physics 2020-05-11 Christoph E. Nebel

In the last decade, a 2-terminal passive circuit element called a memristor has been developed for non-volatile resistive random access memory and has more recently shown promise for neuromorphic computing. Compared to flash memory,…

We report on the characterization of microwave loss of thin aluminum oxide films at low temperatures using superconducting lumped resonators. The oxide films are fabricated using plasma oxidation of aluminum and have a thickness of 5 nm. We…

Mesoscale and Nanoscale Physics · Physics 2014-02-24 Chunqing Deng , Martin Otto , Adrian Lupascu

Bio-conjugated nanomaterials play a promising role in the development of novel supramolecular structures, molecular machines, and biosensing devices. In this study, lipid-conjugated gold nanoparticles were synthesized and allowed to form a…

Materials Science · Physics 2012-07-24 Subhasish Chatterjee , Markrete Krikorian , Harry D. Gafney , Bonnie Gersten

The ability to control porosity in oxide thin films is one of the key factors that determine their properties. Despite the abundance of dry processes for the synthesis of oxide porous layers, the high porosity range is typically achieved by…

An ion beam based dry etching method has been developed for progressive reduction of dimensions of prefabricated nanostructures. The method has been successfully applied to aluminum nanowires and aluminum single electron transistors (SET).…

Superconductivity · Physics 2009-04-07 M. Savolainen , V. Touboltsev , P. Koppinen , K. -P. Riikonen , K. Arutyunov