Related papers: Tunneling in double barrier junctions with 'hot sp…
Molecules of bisthiolterthiophene have been adsorbed on the two facing gold electrodes of a mechanically controllable break junction in order to form metal-molecule(s)-metal junctions. Current-voltage (I-V) characteristics have been…
We present magneto-transport study in an InAs/GaSb double quantum well structure in the weak localization regime. As the charge carriers are depleted using a top gate electrode, we observe a crossover from weak anti-localization (WAL) to…
We investigate switching of magnetic tunnel junctions (MTJs) driven by the thermal effect of the transport current through the junctions. The switching occurs in a specially designed composite free layer, which acts as one of the MTJ…
We have fabricated ultra-thin YBa2Cu3O7-x nanowires with a high critical current density and studied their voltage switching behavior in the 4.2 - 90 K temperature range. A comparison of our experimental data with theoretical models…
Utilizing Co/Al$_2$O$_3$/Co magnetic tunnel junctions (MTJs) with Co electrodes of different crystalline phases, a clear relationship between electrode structure and junction transport properties is presented. For junctions with one…
Magnetization and magnetic microstructure of top soft magnetic layer (Fe), which is exchange spring coupled to bottom hard magnetic layer ($L1_0$ FePt) is studied using high resolution Kerr microscopy. When the sample (FePt/Fe) is at…
We analyze shot noise in a magnetic tunnel junction with a two-level quantum dot attached to the magnetic electrodes. The considerations are limited to the case when some transport channels are suppressed at low temperatures. Coupling of…
Tunneling spectroscopy is applied to tunnel junctions with only one or no ferromagnetic electrode to study the excitation of quasi particles in magnetic tunnel junctions. The bias dependence is investigated with high accuracy by inelastic…
Two-dimensional electron or hole systems in semiconductors offer the unique opportunity to investigate the physics of strongly interacting fermions. We have measured the 1/f resistance noise of two-dimensional hole systems in high mobility…
Magnetotransport properties of a pseudomorphic GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure are investigated in pulsed magnetic fields up to 50 T and at temperatures of T=1.4 K and 4.2 K. The structure studied consists of a Si…
We show that suitably-designed magnetic semiconductor heterostructures consisting of Mn delta-doped GaAs and p-type AlGaAs layers, in which the locally high concentration of magnetic moments of Mn atoms are controllably overlapped with the…
In a number of current experiments in the field of spin-caloritronics a temperature gradient across a nanostructured interface is applied and spin-dependent transport phenomena are observed. However, a lack in the interpretation and…
We propose a conceptually new way to gather information on the electron bands of buried metal(semiconductor)/insulator interfaces. The bias dependence of low frequency noise in Fe$_{1-x}$V$_{x}$/MgO/Fe (0 $<$ x $<$ 0.25) tunnel junctions…
The metallic conductivity of dilute two-dimensional holes in a GaAs HIGFET (Heterojunction Insulated-Gate Field-Effect Transistor) with extremely high mobility and large $r_{s}$ is found to have a linear dependence on temperature,…
The tunneling between two parallel two-dimensional electron gases has been investigated as a function of temperature $T$, carrier density $n$, and the applied perpendicular magnetic field $B$. In zero magnetic field the equilibrium resonant…
In spite of the interest in the two-dimensional electron gases (2DEGs) experimentally found at surfaces and interfaces, important uncertainties remain about the observed insulator--metal transitions (IMTs). Here we show how an explicit…
Altermagnets can replace ferromagnets in tunnel junctions, yielding large tunneling magnetoresistance, ultrafast switching, and low-power functionality. While most studies explore the linear-response regime, interesting features emerge at…
Hexagonal boron nitride (hBN) is a prototypical high-quality two-dimensional insulator and an ideal material to study tunneling phenomena, as it can be easily integrated in vertical van der Waals devices. For spintronic devices, its…
The effect of dc electrical stress and breakdown on Josephson and quasiparticle tunneling in Nb/Al/AlOx/Nb junctions with ultrathin AlOx barriers typical for applications in superconductor digital electronics has been investigated. The…
We compute the shot noise in ballistic and disordered Fe/MgO/Fe tunnel junctions by a wave function-matching method. For tunnel barriers with no more than 5 atomic layers we find a suppression of the Fano factor as a function of the…