Related papers: Quantum dot occupation and electron dwell time in …
We report on low-temperature electronic transport measurements of a silicon metal-oxide-semiconductor quantum dot, with independent gate control of electron densities in the leads and the quantum dot island. This architecture allows the dot…
A single-electron transistor has been realized in a Ga[Al]As heterostructure by oxidizing lines in the GaAs cap layer with an atomic force microscope. The oxide lines define the boundaries of the quantum dot, the in-plane gate electrodes,…
We study electron transport through a quantum dot in a Tomonaga-Luttinger liquid with an inhomogeneity induced either by a non-uniform electron interaction or by the presence of tunnel resistances of contacts. The non-analytic temperature…
We calculate the tunnelling density of states (TDoS) for a quantum dot in the Coulomb blockade regime, using a functional integral representation with allowing correctly for the charge quantisation. We show that in addition to the…
We study thermoelectric transport through a serial double quantum dot (DQD) coupled to two metallic leads with different thermal energies. We take into account the electron sequential and cotunneling effects via different master equation…
Using time-resolved transconductance spectroscopy, we study the tunneling dynamics between a two-dimensional electron gas (2DEG) and self-assembled quantum dots (QDs), embedded in a field-effect transistor structure. We find that the…
This paper reviews recent studies of mesoscopic fluctuations in transport through ballistic quantum dots, emphasizing differences between conduction through open dots and tunneling through nearly isolated dots. Both the open dots and the…
We performed electronic transport measurements on 1D InAs quantum wires. In sufficiently disordered wires, transport is dominated by Coulomb blockade, and the conductance can be well described by tunneling through a quantum dot embedded…
We demonstrate single-charge occupation of ambipolar quantum dots in silicon via charge sensing. We have fabricated ambipolar quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron…
We report charge transport measurements in a ring-shaped quadruple quantum dot system, composed of two vertically coupled double quantum dots connected in parallel. The vertical coupling introduces an isospin degree of freedom tied to the…
We present measurements of the rates for an electron to tunnel on and off a quantum dot, obtained using a quantum point contact charge sensor. The tunnel rates show exponential dependence on drain-source bias and plunger gate voltages. The…
In this paper we have calculated electron transport coefficient in ballistic regime through a periodic dot sandwiched between uniform leads. We have calculated the Green's function (GF), density of states (Dos) and the coherent transmission…
Semiconductor InSb nanowires present a highly intriguing platform with immense potential for applications in spintronics and topological quantum devices. The narrow band gap exhibited by InSb allows for precise tuning of these nanowires,…
We theoretically investigate transport signatures of quantum interference in highly symmetric double quantum dots in a parallel geometry and demonstrate that extremely weak symmetry-breaking effects can have a dramatic influence on the…
In Coulomb drag, a current flowing in one conductor can induce a voltage across an adjacent conductor via the Coulomb interaction. The mechanisms yielding drag effects are not always understood, even though drag effects are sufficiently…
Equilibrium transport properties of a single-level quantum dot tunnel-coupled to ferromagnetic leads and exchange-coupled to a side nonmagnetic reservoir are analyzed theoretically in the Kondo regime. The equilibrium spectral functions and…
We have fabricated quantum dot single electron transistors, based on AlGaAs/GaAs heterojunctions without modulation doping, which exhibit clear and stable Coulomb blockade oscillations. The temperature dependence of the Coulomb blockade…
Transport through two quantum dots laterally embedded in Aharonov-Bohm interferometry with infinite intradot and arbitrary interdot Coulomb repulsion is analyzed in the weak coupling and Coulomb blockade regime. By employing the modified…
The transient response of a quantum dot with strong Coulomb interaction to a fast change in the gate potential, as well as the stationary ac-response to a slow harmonic variation of the gate potential are computed by means of a real-time…
We investigate the electronic transport through two parallel double quantum dots coupled both capacitively and via a perpendicularly aligned charge qubit. The presence of the qubit leads to a modification of the coherent tunnel amplitudes…