Related papers: Integrated high frequency aluminum nitride optomec…
Atomic force spectroscopy and microscopy (AFM) are invaluable tools to characterize nanostructures and biological systems. Most experiments, including state-of-the-art images of molecular bonds, are achieved by driving probes at their…
We describe the measurement and modeling of amplitude noise and phase noise in ultra-high Q nanomechanical resonators made from stoichiometric silicon nitride. With quality factors exceeding 2 million, the resonators' noise performance is…
We report an efficient extension of supercontinuum generation through dispersion engineering of crystalline aluminum nitride (AlN)-on-sapphire waveguides. Using a tailored epitaxial regrowth of AlN epilayers and an optimized fabrication…
The nitride semiconductor materials GaN, AlN, and InN, and their alloys and heterostructures have been investigated extensively in the last 3 decades, leading to several technologically successful photonic and electronic devices. Just over…
Titanium nitride (TiNx) films are ideal for use in superconducting microresonator detectors because: a) the critical temperature varies with composition (0 < Tc < 5 K); b) the normal-state resistivity is large, \rho_n ~ 100 $\mu$Ohm cm,…
Since the technological breakthrough prompted by the inception of light emitting diodes based on III-nitrides, these material systems have emerged as strategic semiconductors not only for the lighting of the future, but also for the new…
Lumped-element inductors are an integral component in the circuit QED toolbox. However, it is challenging to build inductors that are simultaneously compact, linear and low-loss with standard approaches that either rely on the geometric…
Silicon nitride (SiN) mechanical resonators with high quality mechanical properties are attractive for fundamental research and applications. However, it is challenging to maintain these mechanical properties while achieving strong coupling…
Granular Aluminum is a superconductor known for more than eighty years, which recently found its application in qubits, microwave detectors and compact resonators, due to its high kinetic inductance, critical magnetic field and critical…
Diamond integrated photonic devices are promising candidates for emerging applications in nanophotonics and quantum optics. Here we demonstrate active modulation of diamond nanophotonic circuits by exploiting mechanical degrees of freedom…
All quantum optomechanics experiments to date operate at cryogenic temperatures, imposing severe technical challenges and fundamental constraints. Here we present a novel design of on-chip mechanical resonators which exhibit fundamental…
Recent advances in microelectromechanical systems often require multifunctional materials, which are designed so as to optimize more than one property. Using density functional theory calculations for alloyed nitride systems, we illustrate…
Ohmic contacts to high (>70\%) Al content n-type Al$_x$Ga$_{1-x}$N ultra-wide bandgap semiconductor layers in nitride electronic and photonic devices are typically fabricated by a lift-off process and high temperature ($>700^\circ$C)…
An integrated photonic platform is proposed for strong interactions between atomic beams and annealing-free high-quality-factor (Q) microresonators. We fabricated a thin-film, air-clad SiN microresonator with a loaded Q of $1.55\times10^6$…
In strained mechanical resonators, the concurrence of tensile stress and geometric nonlinearity dramatically reduces dissipation. This phenomenon, dissipation dilution, is employed in mirror suspensions of gravitational wave interferometers…
Titanium nitride is an attractive material for a range of superconducting quantum-circuit applications owing to its low microwave losses, high surface inductance, and chemical stability. The physical properties and device performance,…
By using ab inito calculations within Density Functional Theory, we have explored the possible structures and various properties of porous AlN monolayer materials. Two kinds of porous AlN monolayer are identified, and the phonon dispersion…
We report the influence of the AlN interlayer thickness (0-15 nm) on the photovoltaic properties of Al0.37In0.63N on Si heterojunction solar cells deposited by radio frequency sputtering. The poor junction band alignment and the presence of…
Using first-principles density functional theory calculations in combination with the climbing-image nudged elastic band method, we investigated the adsorption, desorption, and diffusion of atomic chlorine and molecular chlorine on the Al…
Despite considerable advancements, high electron mobility transistors (HEMTs) based on gallium nitride (GaN) channels remain largely limited to power applications below 650 V. For higher power demands, the ultra-wide bandgap semiconductor…