Related papers: Physical insight into reduced surface roughness sc…
Band gap modification for small-diameter (1 nm) silicon nanowires resulting from the use of different species for surface termination is investigated by density functional theory calculations. Because of quantum confinement, small-diameter…
The discretization of the electronic structure of nanometer-size solid systems due to quantum confinement and the concomitant modification of their physical properties is one of the cornerstones for the development of Nanoscience and…
Vertical charge order shapes the electronic properties in layered charge density wave (CDW) materials. Various stacking orders inevitably create nanoscale domains with distinct electronic structures inaccessible to bulk probes. Here, the…
Superscattering, induced by degenerate resonances, breaks the fundamental single-channel limit of scattering cross section of subwavelength structures; in principle, an arbitrarily large total cross section can be achieved via…
Surface scattering of free electrons strongly modifies the electromagnetic response near the interface. Due to the inherent anisotropy of the surface scattering that necessarily reverses the normal the interface component of the electron…
Electronic transport through a material depends on the response to local perturbations induced by defects or impurities in the material. The scattering processes can be described in terms of phase shifts and corresponding cross sections.…
Renormalization of the Coulomb interaction in layered metals results in a strongly anisotropic plasma mode with low frequencies for small components of wave vector in the in-plane direction. Interaction of electrons with this mode was found…
Recent experiments in silicon MOSFETs indicate that the Hall coefficient is independent of magnetic field applied at a small angle with respect to the plane. Below a scattering between spin-up and spin-down carriers is considered to be the…
A general model for treating the effects of three dimensional interface roughness (IFR) in layered semiconductor structures has been derived and experimentally verified. Configurational averaging of the IFR potential produces an effective…
A scattering method is used to calculate the surface band structure of Al(111) from 8.6 eV below the Fermi level to 9 eV above it. This method has rarely been implemented previously. The complete complex bulk and surface band structure is…
The strain effect on electronic structure and thermoelectric properties of Higher Manganese Silicides (HMSs) Mn4Si7 was studied using Density Functional Theory (DFT) and through solving Boltzman Transport Equation (BTE). We found that the…
Using density functional theory (DFT) we report results for the electronic structure and vibrational dynamics of hydrogenated {\beta} reconstructed Silicon Carbide (001) (3x2) surfaces with various levels of hydrogenation. These results…
The paper presents briefly some general points of the theory of Surface Enhanced Raman Scattering on metals, semiconductors, dielectrics and graphene. It is pointed out that the reason of SERS on graphene and some other 2D materials is not…
The paper presents a theoretical description of the effects of strain induced by out-of-plane deformations on charge distributions and transport on graphene. A review of a continuum model for electrons using the Dirac formalism is…
A scattering mechanism stemming from the Stark-shift of energy levels by electric fields in semiconductor quantum wells is identified. This scattering mechanism feeds off interface roughness and electric fields, and modifies the well known…
In this work, the origin of the low free electron mobility in SiC MOSFETs is investigated using the scattering theory of two-dimensional electron gases. We first establish that neither phonon scattering nor Coulomb scattering can be the…
In a recent Letter (PRL 88, 196404 (2002)), the effective g-factor and the effective mass have been studied by Pudalov et al. in a dilute 2D electron system in silicon. The authors contrast their data with the data obtained by our group…
Ultrathin two-dimensional semiconductors obtained from layered transition-metal dichalcogenides such as molybdenum disulfide (MoS2) are promising for ultimately scaled transistors beyond Si. Although the shortening of the semiconductor…
The recent work on stanene as quantum spin Hall insulators made us investigate bilayer stanene using first principle calculations. With an aim of improving and developing new properties, via modulating the stacking order (and angle) of the…
Electron spin diffusion is investigated in monolayer MoS$_2$ in the absence of external electric and magnetic fields. The electron-impurity scattering, which is shown to play a negligible role in spin relaxation in time domain in this…