Related papers: Topo-electronic transitions in Sb(111) nanofilm: t…
At the ultra-thin film limit, quantum confinement strongly improves thermoelectric figure of merit in materials such as Sb$_2$Te$_3$ and Bi$_2$Te$_3$. These high quality films have only been realized using well controlled techniques such as…
Topological insulators host exotic quantum phenomena such as the quantum spin Hall (QSH) effect, which enables dissipationless one-dimensional edge conduction. Realizing such states at room temperature and on a macroscopic scale is…
The substrate-induced topological phase transition of silience is a formidable obstacle for developing silicene-based materials and devices for compatibility with current electronics by using its topologically protected dissipationless edge…
We investigate the electronic, structural and topological properties of the SnTe and PbTe cubic nanowires using ab-initio calculations. Using standard and linear-scale density functional theory, we go from the ultrathin limit up to the…
Quantum-confined electronic states such as quantum-well states (QWS) inside thin Pb(111) films and modified image-potential states (IPS) above the Pb(111) films grown on Si(111)7$\times$7 substrate were studied by means of low-temperature…
A theoretical study of the surface energy-loss function of freestanding Pb(111) thin films is presented, starting from the single monolayer case. The calculations are carried applying the linear response theory, with inclusion of the…
Quantum spin Hall (QSH) insulators have unique electronic properties, comprising a band gap in their two-dimensional interior and one-dimensional spin-polarized edge states in which current flows ballistically. In scanning tunneling…
The surface of a topological crystalline insulator (TCI) carries an even number of Dirac cones protected by crystalline symmetry. We epitaxially grew high quality Pb$_{1-x}$Sn$_x$Te(111) films and investigated the TCI phase by in-situ…
We present a comprehensive study of the crystal structure of the thin-film, ferromagnetic topological insulator (Bi, Sb)$_{2-x}$V$_x$Te$_3$. The dissipationless quantum anomalous Hall edge states it manifests are of particular interest for…
Quantum manifestations of various properties of metallic thin films by quantum size effect (QSE) have been studied intensively. Here, using first-principles calculations, we show quantum manifestation in dielectric properties of Al(111)…
The quantum size effect (QSE) and strain effect are two key factors influencing the surface morphology of thin films, which can increase film surface roughness through QSE-induced thickness oscillation and strain-induced island formation,…
We study how to use the surface states in a Bi$_{2}$Se$_{3}$ topological insulator ultra-thin film that are affected by finite size effects for the purpose of quantum computing. We demonstrate that: (i) surface states under the finite size…
We present a theoretical realization of quantum spin and quantum valley Hall effects in silicene. We show that combination of an electric field and intrinsic spin-orbit interaction leads to quantum phase transitions at the charge neutrality…
The quantized version of anomalous Hall effect realized in magnetic topological insulators (MTIs) has great potential for the development of topological quantum physics and low-power electronic/spintronic applications. To enable…
Bismuth (Bi) films hold potential for spintronic devices and topological one-dimensional edge transport. Large-area high-quality (111) Bi ultrathin films are grown on InSb (111)B substrates. Strong film-substrate interactions epitaxially…
In this review, We discussed the theoretical foundation and experimental discovery of different topological electronic states of material in condensed matter. At first, we briefly reviewed the conventional electronic states, which have been…
Three-dimensional (3D) topological Dirac semimetal, when thinned down to 2D few layers, is expected to possess gapped Dirac nodes via quantum confinement effect and concomitantly display the intriguing quantum spin Hall (QSH) insulator…
The three-dimensional (3D) topological insulator (TI) is a novel state of matter as characterized by two-dimensional (2D) metallic Dirac states on its surface. Bi-based chalcogenides such as Bi2Se3, Bi2Te3, Sb2Te3 and their combined/mixed…
Bismuth-chalchogenides are model examples of three-dimensional topological insulators. Their ideal bulk-truncated surface hosts a single spin-helical surface state, which is the simplest possible surface electronic structure allowed by…
In a search for a simple proximity system of a topological insulator and a superconductor for studying the role of surface versus bulk effects by gating, we report here on a first step toward this goal, namely the choice of such a system…