Related papers: Magnetically active vacancy related defects in irr…
GaN is a wide-bandgap semiconductor used in high-efficiency LEDs and solar cells. The solid is produced industrially at high chemical purities by deposition from a vapour phase, and oxygen may be included at this stage. Oxidation represents…
The quantum Hall effect is observed in a two-dimensional electron gas formed in millimeter-scale hydrogenated graphene, with a mobility less than 10 $\mathrm{cm^{2}/V\cdot s}$ and corresponding Ioffe-Regel disorder parameter…
We uncover the origin of blue luminescence (BL) peak in Mg doped GaN thin film using a combination of experimental X-ray absorption near edge spectroscopy (XANES), first-principles calculations based on density functional theory and full…
We have studied the field dependence of the magnetization in epilayers of the diluted magnetic semiconductor Ga(1-x)Mn(x)As for 0.0135 < x < 0.083. Measurements of the low temperature magnetization in fields up to 3 T show a significant…
The magnetic sensitivity of Hall-effect sensors made of InAlN/GaN and AlGaN/GaN heterostructures was measured between room temperature and 576{\deg}C. Both devices showed decreasing voltage-scaled magnetic sensitivity at high temperature,…
With the first principles calculations of H and He induced energetics change we demonstrate that in W the accumulation of H (up to 9) and He (up to 4) in a single vacancy (V) surprisingly reduce the formation energy of first and second…
Here we report on the effect of rare earth Gd-doping on the magnetic properties and magnetotransport of GaN two-dimensional electron gasses (2DEGs). Samples are grown by plasma-assisted molecular beam epitaxy and consist of AlN/GaN…
The layers of a high-temperature novel GaAs:Fe diluted magnetic semiconductor (DMS) with an average Fe content up to 20 at. % were grown on (001) i-GaAs substrates using a pulsed laser deposition in a vacuum. The transmission electron…
Magnetic linear dichroism and birefringence in (Ga,Mn)As epitaxial layers is investigated by measuring the polarization plane rotation of reflected linearly polarized light when magnetization lies in the plane of the sample. We report on…
A detailed study of the magnetic and magnetocaloric properties of a garnet compound Mn$_{3}$Cr$_{2}$Ge$_{3}$O$_{12}$ is carried out using x-ray diffraction, magnetization, heat capacity, and neutron diffraction measurements as well as…
The superconducting properties of high-\tc\ materials are functions of carriers concentration, which is controlled by the concentration of defects including heterovalent cations, interstitial oxygen ions, and oxygen vacancies. Here we…
Cubic (zinc-blende) Ga1-xMnxN layers were grown by plasma-assisted molecular beam epitaxy on GaAs (001) substrates. Some of the structures also contained cubic AlN buffer layers. Auger Electron Spectroscopy and Secondary Ion Mass…
Magnetotransport properties of ferromagnetic semiconductor (Ga,Mn)As have been investigated. Measurements at low temperature (50 mK) and high magnetic field (<= 27 T) have been employed in order to determine the hole concentration p =…
Fine powders of micron- and submicron-sized particles of undoped Cu2O semiconductor, with three different sizes and morphologies have been synthesized by different chemical processes. These samples include nanospheres 200 nm in diameter,…
We investigated experimentally non-equilibrium state of a two-dimensional electron gas (2DEG) in the quantum Hall effect (QHE) regime, studying the hysteresis of magnetoresistance of a 2DEG with a constriction. The large amplitude of the…
In the Fe-doped GaN phase-separated magnetic semiconductor GaFeN, the presence of embedded Ga$_y$Fe$_{4-y}$N nanocrystals determines the magnetic properties of the system. Here, through a combination of anomalous x-ray diffraction and…
An influence of Mg and Si dopants on the formation energies and the concentration of point defects in yttrium aluminum garnet (YAG) is studied using the density functional approach. The formation energies of Mg and Si substitutional and…
Optical properties of ZnMnO layers grown at low temperature by Atomic Layer Deposition and Metalorganic Vapor Phase Epitaxy are discussed and compared to results obtained for ZnMnS samples. Present results suggest a double valence of Mn…
We performed first-principles calculations to investigate the possible magnetism induced by the different concentrations of non-magnetic impurities and vacancies in BN sheet. The atoms of Be, B, C, N, O, Al and Si are used to replace either…
In this letter we report observation of room temperature ferromagnetism in bulk Ga$_2$O$_3$ . We also observe large (10-60%) increase/decrease in photoluminescence. In the red(700 nm wavelength)/blue(500 nm), with the application of small…