Related papers: A novel model for the fractional quantum Hall effe…
Electron pairing is a rare phenomenon appearing only in a few unique physical systems; e.g., superconductors and Kondo-correlated quantum dots. Here, we report on an unexpected, but robust, electron "pairing" in the integer quantum Hall…
The fractional quantum Hall (FQH) effect is a macroscopic manifestation of strong electron-electron interactions. Even denominator FQH states (FQHSs) at half-filling are particularly interesting as they are predicted to host non-Abelian…
Topological states of matter are characterized by topological invariant, which are physical quantities whose values are quantized and do not depend on details of the measured system. Of these, the easiest to probe in experiments is the…
We investigated the behavior of fractional quantum Hall (FQH) states in a two-dimensional electron system with layer thickness and an in-plane magnetic field. Our comparisons across various filling factors within the first Landau level…
Evidence for developing fractional quantum Hall effect (FQHE) at filling fraction $\nu{=}1/6$ and $1/8$ has recently been reported in wide GaAs quantum wells [Wang \emph{et al.}, PRL {\bf 134}, 046502 (2025)]. In this article, we…
The single-particle spectral function for an incompressible fractional quantum Hall state in the presence of a scalar short-ranged attractive impurity potential is calculated via exact diagonalization within the spherical geometry. In…
We investigated the Integer Quantum Hall Effect (IQHE) using an inductive method. The following conclusions can be derived from our study: (i) when the Fermi energy is located between Landau levels the only extended states at the Fermi…
We analyze thermal transport in the fractional quantum Hall effect (FQHE), employing a Luttinger liquid model of edge states. Impurity mediated inter-channel scattering events are incorporated in a hydrodynamic description of heat and…
We examine the quantum phase diagram of the fractional quantum Hall effect in the lowest Landau level in half-filled bilayer structures as a function of tunneling strength and layer separation. Using numerical exact diagonalization we…
A new universality of metal-insulator transition in integer quantum Hall effect (IQHE) system is studied based on a lattice model, where the IQHE states only exist within a finite range of Fermi energy in the presence of disorders. A…
Two-component fractional quantum Hall (2C-FQH) states in electron bilayers have been known for decades, yet their experimental realization remained limited to low-order fractions. Here we report on several families of high-order 2C-FQH…
A large class of fractional quantum Hall (FQH) states can be classified according to their pattern of zeros, which describes the order of zeros in ground state wave functions as various clusters of electrons are brought together. The…
At low Landau level filling of a two-dimensional electron system, typically associated with the formation of an electron crystal, we observe local minima in Rxx at filling factors nu=2/11, 3/17, 3/19, 2/13, 1/7, 2/15, 2/17, and 1/9. Each of…
The fractional quantum Hall (FQH) effect at the filling factor $\nu=5/2$ was discovered in GaAs heterostructures more than 35 years ago. Various topological orders have been proposed as possible candidates to describe this FQH state. Some…
We show that universal transport coefficients of the fractional quantum Hall effect (FQHE) can be understood as a response to variations of spatial geometry. Some transport properties are essentially governed by the gravitational anomaly.…
Quantum Hall Dynamics is formulated on von Neumann lattice representation where electrons in Landau levels are defined on lattice sites and are treated systematically like lattice fermions. We give a proof of the integer Hall effect, namely…
We study how the stability of the fractional quantum Hall effect (FQHE) is influenced by the geometry of band structure in lattice Chern insulators. We consider the Hofstadter model, which converges to continuum Landau levels in the limit…
We study the quantum Hall effect (QHE) in graphene based on the current injection model. In our model, the presence of disorder, the edge-state picture, extended states and localized states, which are believed to be indispensable…
Disorder and electron-electron interaction play essential roles in the physics of electron systems in condensed matter. In two-dimensional, quantum Hall systems, extensive studies of disorder-induced localization have led to the emergence…
We propose a new hierarchy scheme for the filling factor, a parameter which characterizes the occurrence of the Fractional Quantum Hall Effect (FQHE). We consider the Hausdorff dimension, $h$, as a parameter for classifying fractional spin…