Related papers: Antiferromagnetic Domain Wall Engineering in Chrom…
Strain engineering provides the ability to control the ground states and associated phase transition in the epitaxial films. However, the systematic study of intrinsic characters and their strain dependency in transition-metal nitrides…
The pinning and depinning of antiferromagnetic (AFM) domain wall is certainly the core issue of AFM spintronics. In this work, we study theoretically the N\'eel-type domain wall pinning and depinning at a notch in an antiferromagnetic (AFM)…
Although enhanced conductivity at ferroelectric domain boundaries has been found in BiFeO$_3$ films, Pb(Zr,Ti)O$_3$ films, and hexagonal rare-earth manganite single crystals, the mechanism of the domain wall conductivity is still under…
Antiferromagnetic materials present us with rich and exciting physics, which we can exploit to open new avenues in spintronic device applications. We explore perpendicularly magnetized exchange biased systems of Pt/Co/IrMn and Pt/Co/FeMn,…
Ferroelectric domain walls are a rich source of emergent electronic properties and unusual polar order. Recent studies showed that the configuration of ferroelectric walls can go well beyond the conventional Ising-type structure. N\'eel-,…
Influence of applied in-plane elastic strains on the static magnetic configuration of a 530 nm magnetostrictive FeCuNbSiB thin film. The in-plane strains are induced via the application of a voltage to a piezoelectric actuator on which the…
A flat band in fermionic system is a dispersionless single-particle state with a diverging effective mass and nearly zero group velocity. These flat bands are expected to support exotic properties in the ground state, which might be…
Dynamics of magnetization domain walls (DWs) in thin ferromagnetic nanotubes subject to longitudinal external fields is addressed analytically in the regimes of strong and weak penalization. Explicit functional forms of the DW profiles and…
The dynamics of micrometer-sized magnetic domains in ultra-thin ferromagnetic films is so dramatically slowed down by quenched disorder that the spontaneous elastic tension collapse becomes unobservable at ambient temperature. By…
Antiferromagnetic spintronics is an emerging research field which aims to utilize antiferromagnets as core elements in spintronic devices. A central motivation toward this direction is that antiferromagnetic spin dynamics is expected to be…
The ultrafast magnetic dynamics in compensated ferrimagnets not only provides information similar to antiferromagnetic dynamics, but more importantly opens new opportunities for future spintronic devices [Kim et al., Nat. Mater. 16, 1187…
We present a phenomenological theory of altermagnets, that captures their unique magnetization dynamics and allows modelling magnetic textures in this new magnetic phase. Focusing on the prototypical d-wave altermagnets, e.g. RuO$_2$, we…
There is growing evidence that domain walls in ferroics can possess emergent properties that are absent in bulk materials. For example, 180 domain walls in the ferroelectric-antiferromagnetic BiFeO3 are particularly interesting because they…
A series of Fe$_x$Rh$_{100-x}$ ($30 \leq x \leq 57$) films were epitaxially grown using magnetron sputtering, and were systematically studied by magnetization-, electrical resistivity-, and Hall resistivity measurements. After optimizing…
To explore the further possibilities of nanometer-thick ferromagnetic films (ultrathin ferromagnetic films), we investigated the ferromagnetic resonance (FMR) of 1 nm-thick Co film. Whilst an FMR signal was not observed for the Co film…
Domain wall dynamics in a magnetoelectric antiferromagnet is analyzed, and its implications for magnetoelectric memory applications are discussed. Cr$_2$O$_3$ is used in the estimates of the materials parameters. It is found that the domain…
Antiferromagnets have recently emerged as attractive platforms for spintronics applications, offering fundamentally new functionalities compared to their ferromagnetic counterparts. While nanoscale thin film materials are key to the…
Single phase and strained LuMnO3 thin films are discovered to display co-existing ferromagnetic and antiferromagnetic orders. A large moment ferromagnetism (approx. 1 muB), which is absent in bulk samples, is shown to display a magnetic…
We predict the electrical generation and injection of domain walls into a ferromagnetic nano-wire without the need of an assisting magnetic field. Our analytical and numerical results show that above a critical current $j_{c}$ domain walls…
Electronic transport through thin and laterally constrained domain walls in ferromagnetic nanojunctions is analyzed theoretically. The description is formulated in the basis of scattering states. The resistance of the domain wall is…