Related papers: Polarization fluctuation dominated electrical tran…
We consider a semiconductor in a non-equilibrium steady state, with a dc current. On top of the stationary carrier motion there are fluctuations. It is shown that the stationary motion of the carriers (i.e., their drift) can have a profound…
Ferroelectric materials are characterized by the presence of an electric dipole that can be reversed by application of an external electric field, a feature that is exploited in ferroelectric memories. All ferroelectrics are piezoelectric,…
Magnetism and transport are two key functional ingredients in modern electronic devices. In oxide heterostructures, ferroelectricity can provide a new route to control these two properties via electrical operations, which is scientifically…
Beyond a conventional classification of ferroelectricity, there is a class of materials where electronic degrees of freedom and electronic interactions are directly responsible for electric polarization and ferroelectric transition. This is…
Ferroelectric materials are established candidates for beyond complementary metal-oxide-semiconductor technology, owing to their non-volatile spontaneous electrical polarization. The recent boom in electric dipole texture engineering and…
Electric field plays an important role in ferroelectric phase transition. There have been numerous phase field formulations attempting to account for electrostatic interactions subject to different boundary conditions. In this paper, we…
Localization and dephasing of conduction electrons in a low carrier density ferromagnet due to scattering on magnetic fluctuations is considered. We claim the existence of the "mobility edge", which separates the states with fast diffusion…
This paper investigates and compares through a comprehensive TCAD analysis 2D and 3D simulations for ferroelectric based FETs. We provide clear evidence that the multiple read conductance values experimentally observed in FeFETs stem from…
We discuss the interplay between anti-ferromagnetic order and polarization fluctuations in a magnetic quantum paraelectric. Using an action where anti-ferromagnetic order parameter couples to the polarization fluctuations and as well as…
Electronic quantum effects in disordered conductors are controlled by the dephasing rate of conduction electrons. This rate is expected to vanish with the temperature. We consider the very intriguing recently reported apparent saturation of…
Flexoelectricity - polarization induced by strain gradients - offers a route to polar functionality in centrosymmetric dielectrics, where traditional piezoelectric effects are absent. This study investigates the flexoelectric effect in…
Combination of local heating and biasing at the tip-surface junction in temperature-assisted piezoresponse force microscopy (tPFM) opens the pathway for probing local temperature induced phase transitions in ferroics, exploring the…
An accurate estimate of the ferroelectric polarization in ferroelectric-dielectric stacks is important from a materials science perspective, and it is also crucial for the development of ferroelectric based electron devices. This paper…
Ferroelectric field-effect transistors (Fe-FETs) with ferroelectric hafnium oxide (FE HfO2) as gate insulator are being extensively explored as a promising device candidate for three-dimensional (3D) NAND memory application. FE HfO2…
The interplay between the electron transport in metal/ferroelectric/metal junctions with ultrathin ferroelectric barriers and the polarization state of a barrier is investigated. Using a model which takes into account screening of…
We investigated domain kinetics by measuring the polarization switching behaviors of polycrystalline Pb(Zr,Ti)O$_{3}$ films, which are widely used in ferroelectric memory devices. Their switching behaviors at various electric fields and…
We generalize the Fredrickson-Helfand theory of the microphase separation in symmetric diblock copolymer melts by taking into account the influence of a time-independent homogeneous electric field on the composition fluctuations within the…
We study influence of image forces on conductance of ferroelectric tunnel junctions. We show that the influence of image forces is twofold: i) they enhance the electro-resistance effect due to polarization hysteresis in symmetric tunnel…
All known proper ferroelectrics are unable to polarize normal to a surface or interface if the resulting depolarization field is unscreened, but there is no fundamental principle that enforces this behavior. In this work, we introduce…
In this letter, the transient behavior of a ferroelectric (FE) metal-oxide-semiconductor (MOS) capacitor is theoretically investigated with a series resistor. It is shown that compared to a conventional high-k dielectric MOS capacitor, a…