Related papers: Electron spin rephasing in $n$-type (001) GaAs qua…
Qubits, the quantum mechanical bits required for quantum computing, must retain their fragile quantum states over long periods of time. In many types of electron spin qubits, the primary source of decoherence is the interaction between the…
Low-temperature electron spin relaxation is studied by the optical orientation method in bulk n-GaAs with donor concentrations from 10^14 cm^{-3} to 5x10^17 cm^{-3}. A peculiarity related to the metal-to-insulator transition (MIT) is…
The influence of temperature and transport conditions on the electron spin relaxation in lightly doped n-type GaAs semiconductors is investigated. A Monte Carlo approach is used to simulate electron transport, including the evolution of…
We consider theoretically the relaxation of electron spin component parallel to the growth direction in multiple (110) GaAs quantum wells. The sources of spin relaxation are the random Rashba spin-orbit coupling due to the electric field of…
We consider the decoherence of a single localized electron spin due to its coupling to the lattice nuclear spin bath in a semiconductor quantum computer architecture. In the presence of an external magnetic field and at low temperatures,…
Electron spin diffusion is investigated in monolayer MoS$_2$ in the absence of external electric and magnetic fields. The electron-impurity scattering, which is shown to play a negligible role in spin relaxation in time domain in this…
We report on the optical manipulation of the electron spin relaxation time in a GaAs based heterostructure. Experimental and theoretical study shows that the average electron spin relaxes through hyperfine interaction with the lattice…
The electron spin relaxation in $n$-type and intrinsic GaAs$_{1-x}$Bi$_x$ with Bi composition $0\le x \le 0.1$ is investigated from the microscopic kinetic spin Bloch equation approach. The incorporation of Bi is shown to markedly decrease…
In semiconductor quantum dots, the electron hyperfine interaction with the nuclear spin bath is the leading source of spin decoherence at cryogenic temperature. Using high-resolution two-color differential transmission spectroscopy, we…
This paper discusses the combined effects of optical excitation power, interface roughness, lattice temperature, and applied magnetic fields on the spin-coherence of excitonic states in GaAs/AlGaAs multiple quantum wells. For low optical…
The electron spin dynamics in (111)-oriented GaAs/AlGaAs quantum wells is studied by timeresolved photoluminescence spectroscopy. By applying an external field of 50 kV/cm a two-order of magnitude increase of the spin relaxation time can be…
We report on both experimental and theoretical study of conduction-electron spin polarization dynamics achieved by pulsed optical pumping at room temperature in GaAs(1-x)N(x) alloys with a small nitrogen content (x = 2.1, 2.7, 3.4%). It is…
A unique spin depolarization mechanism, induced by the presence of g-factor anisotropy and intervalley scattering, is revealed by spin transport measurements on long-distance germanium devices in a longitudinal magnetic field. The…
We discuss the implications of a small indium content (3%) in a GaAs epilayer on the electron- and nuclear-spin relaxation due to enhanced quadrupolar effects induced by the strain. Using the weakly perturbative spin-noise spectroscopy, we…
We have measured the spin injection efficiency and spin lifetime in Co$_2$FeSi/$n$-GaAs lateral nonlocal spin valves from 20 to 300 K. We observe large ($\sim$40 $\mu$V) spin valve signals at room temperature and injector currents of…
The spin accumulation in an n-GaAs channel produced by spin extraction into a (Ga,Mn)As contact is measured by cross-sectional imaging of the spin polarization in GaAs. The spin polarization is observed in a 1 \mum thick n-GaAs channel with…
Electron spin relaxation in paramagnetic Ga(Mn)As quantum wells is studied via the fully microscopic kinetic spin Bloch equation approach where all the scatterings, such as the electron-impurity, electron-phonon, electron-electron Coulomb,…
A spin relaxation mechanism is proposed based on a second-order spin-flip intersubband spin-orbit coupling together with the spin-conserving scattering. The corresponding spin relaxation time is calculated via the Fermi golden rule. It is…
Nuclear spin relaxation is studied in n-GaAs thick layers and microcavity samples with different electron densities. We reveal that both in metallic samples where electrons are free and mobile, and in insulating samples, where electrons are…
A slanting magnetic field is usually used to realize a slight hybridization between the spin and orbital degrees of freedom in a semiconductor quantum dot, such that the spin is manipulable by an external oscillating electric field. Here we…