Related papers: Error-Correction in Flash Memories via Codes in th…
Rank modulation is a way of encoding information to correct errors in flash memory devices as well as impulse noise in transmission lines. Modeling rank modulation involves construction of packings of the space of permutations equipped with…
Codes for rank modulation have been recently proposed as a means of protecting flash memory devices from errors. We study basic coding theoretic problems for such codes, representing them as subsets of the set of permutations of $n$…
We study error-correcting codes for permutations under the infinity norm, motivated by a novel storage scheme for flash memories call rank modulation. In this scheme, a set of $n$ flash cells are combined to create a single virtual…
We address the problem of multipermutation code design in the Ulam metric for novel storage applications. Multipermutation codes are suitable for flash memory where cell charges may share the same rank. Changes in the charges of cells…
Permutation codes, in the form of rank modulation, have shown promise for applications such as flash memory. One of the metrics recently suggested as appropriate for rank modulation is the Ulam metric, which measures the minimum…
The current flash memory technology focuses on the cost minimization of its static storage capacity. However, the resulting approach supports a relatively small number of program-erase cycles. This technology is effective for consumer…
The rank-modulation scheme has been recently proposed for efficiently storing data in nonvolatile memories. Error-correcting codes are essential for rank modulation, however, existing results have been limited. In this work we explore a new…
We consider the local rank-modulation scheme in which a sliding window going over a sequence of real-valued variables induces a sequence of permutations. Local rank-modulation is a generalization of the rank-modulation scheme, which has…
Rank modulation has been recently proposed as a scheme for storing information in flash memories. While rank modulation has advantages in improving write speed and endurance, the current encoding approach is based on the "push to the top"…
The goal of this paper is to construct systematic error-correcting codes for permutations and multi-permutations in the Kendall's $\tau$-metric. These codes are important in new applications such as rank modulation for flash memories. The…
Random network coding recently attracts attention as a technique to disseminate information in a network. This paper considers a non-coherent multi-shot network, where the unknown and time-variant network is used several times. In order to…
We consider the local rank-modulation scheme in which a sliding window going over a sequence of real-valued variables induces a sequence of permutations. The local rank-modulation, as a generalization of the rank-modulation scheme, has been…
This paper constructs WOM codes that combine rewriting and error correction for mitigating the reliability and the endurance problems in flash memory. We consider a rewriting model that is of practical interest to flash applications where…
The problem of error control in random linear network coding is addressed from a matrix perspective that is closely related to the subspace perspective of K\"otter and Kschischang. A large class of constant-dimension subspace codes is…
This paper presents encoding and decoding algorithms for several families of optimal rank metric codes whose codes are in restricted forms of symmetric, alternating and Hermitian matrices. First, we show the evaluation encoding is the right…
A construction using the E8 lattice and Reed-Solomon codes for error-correction in flash memory is given. Since E8 lattice decoding errors are bursty, a Reed-Solomon code over GF($2^8$) is well suited. This is a type of coded modulation,…
In data storage and data transmission, certain patterns are more likely to be subject to error when written (transmitted) onto the media. In magnetic recording systems with binary data and bipolar non-return-to-zero signaling, patterns that…
Flash memory is well-known for its inherent asymmetry: the flash-cell charge levels are easy to increase but are hard to decrease. In a general rewriting model, the stored data changes its value with certain patterns. The patterns of data…
In order to achieve fault tolerance, highly reliable system often require the ability to detect errors as soon as they occur and prevent the speared of erroneous information throughout the system. Thus, the need for codes capable of…
We construct Gray codes over permutations for the rank-modulation scheme, which are also capable of correcting errors under the infinity-metric. These errors model limited-magnitude or spike errors, for which only single-error-detecting…