Related papers: Spin Hall transistor with electrical spin injectio…
We demonstrate electrical injection and detection of spin-polarized electrons in silicon (Si) using epitaxially grown Fe_3Si/Si Schottky-tunnel-barrier contacts. By an insertion of a delta-doped n^+-Si layer (~ 10^19 cm^-3) near the…
Spin-polarized field-effect transistor (spin-FET), where a dielectric layer is generally employed for the electrical gating as the traditional FET, stands out as a seminal spintronic device under the miniaturization trend of electronics. It…
The dependence of the spin-pumping effect on the yttrium iron garnet (Y3Fe5O12, YIG) thickness detected by the inverse spin Hall effect (ISHE) has been investigated quantitatively. Due to the spin-pumping effect driven by the magnetization…
The spintronic properties of a palladium thin film have been investigated in the presence of hydrogen gas in cobalt/palladium bilayers. Measurements of the inverse spin Hall Effect (ISHE) using cavity ferromagnetic resonance allow…
We demonstrate the formation of orbital and spin Hall effects (OHE/SHE) in the 1T phase of non-magnetic transition metal dichalcogenides. With the aid of density functional theory calculations and model Hamiltonian studies on MX$_2$ (M =…
Here we suggest a novel hybrid spin noise spectroscopy technique, which is sensitive to the spin Hall effect. It is shown that, while the standard spin-spin correlation function is not sensitive to the spin Hall effect, spin-transverse…
Large charge-to-spin conversion (spin Hall angle) and spin Hall conductivity are prerequisites for development of next generation power efficient spintronic devices. In this context, heavy metals (e.g. Pt, W etc.), topological insulators,…
Generation of spin imbalance in nonmagnetic semiconductors is crucial for the functioning of many spintronic devices. An attractive design of spin injectors into semiconductors is based on a spin pumping from a precessing ferromagnet,…
Extraordinary Hall effect (EHE) is a spin-dependent phenomenon that generates voltage proportional to magnetization across a current carrying magnetic film. Magnitude of the effect can be artificially increased by stimulating properly…
The spin Hall effect (SHE), induced by spin-orbit interaction in nonmagnetic materials, is one of the promising phenomena for conversion between charge and spin currents in spintronic devices. The spin Hall (SH) angle is the characteristic…
We demonstrate the electrical injection and detection of spin-polarized electrons in the Co2FeSi/GaAs hybrid system using lateral transport structures. Spin valve signatures and characteristic Hanle curves are observed both in the nonlocal…
The non-dissipative quasistatic longitudinal optical response of insulators is characterized by an intrinsic geometric capacitance, determined by the ratio of the quantum metric to the energy gap, as recently stablished. We study the…
Spin Hall effect (SHE), a mechanism by which materials convert a \textit{charge} current into a \textit{spin} current, invokes interesting physics and promises to empower transformative, energy-efficient memory technology. However,…
The energy efficiency of the spin Hall effects (SHE) can be enhanced if the electrical conductivity is decreased without sacrificing the spin Hall conductivity. The resistivity of Pt films can be increased to 150-300 {\mu}{\Omega}*cm by…
Spin injection and detection in silicon is a difficult problem, in part because the weak spin-orbit coupling and indirect gap preclude using standard optical techniques. We propose two ways to overcome this difficulty, and illustrate their…
We demonstrate the generation and detection of spin-torque ferromagnetic resonance in Pt/YIG bilayers. A unique attribute of this system is that the spin Hall effect lies at the heart of both the generation and detection processes and no…
Spin field effect transistors (SpinFET) are an iconic class of spintronic devices that exploit gate tuned spin-orbit interaction in semiconductor channels interposed between ferromagnetic source and drain contacts to elicit transistor…
Non-local carrier injection/detection schemes lie at the very foundation of information manipulation in integrated systems. This paradigm consists in controlling with an external signal the channel where charge carriers flow between a…
Intrinsic contribution to the spin Hall effect in a two-dimensional silicene is considered theoretically within the linear response theory and Green function formalism. When an external voltage normal to the silicene plane is applied, the…
The spin Hall effect (SHE) generates spin currents within nonmagnetic materials. Previously, studies of the SHE have been motivated primarily to understand its fundamental origin and magnitude. Here we demonstrate, using measurement and…