Related papers: Gate Defined Quantum Confinement in Suspended Bila…
Single crystalline InSb nanosheet is an emerging planar semiconductor material with potential applications in electronics, infrared optoelectronics, spintronics and topological quantum computing. Here we report on realization of a quantum…
Strain engineering enables quantum confinement in pristine graphene without degrading its intrinsic mobility and spin coherence. Here, we extend previously proposed strain-induced charge-qubit architectures by incorporating spin degrees of…
Quantum confinement of graphene carriers is an effective way to engineer its properties. It is commonly realized through physical edges that are associated with the deterioration of mobility and strong suppression of plasmon resonances.…
The recent discovery of methods to isolate graphene, a one-atom-thick layer of crystalline carbon, has raised the possibility of a new class of nano-electronics devices based on the extraordinary electrical transport and unusual physical…
Laterally localized electronic states are identified on a single layer of graphene on ruthenium. The individual states are separated by 3 nm and comprise regions of about 90 carbon atoms. This constitutes a quantum dot array, evidenced by…
We present theoretical results based on mean-field and exact many-body approaches showing that in bilayer triangular graphene quantum dots with zigzag edges the magnetism can be controlled by an external vertical electric-field. We…
We have measured the magneto-resistance of freely suspended high-mobility bilayer graphene. For magnetic fields $B>1$ T we observe the opening of a field induced gap at the charge neutrality point characterized by a diverging resistance.…
Motivated by a recent experiment (Sanchez-Yamagishi et.al, arXiv:1602.06815) reporting evidence of helical spin-polarized edge states in layer-biased twisted bilayer graphene under a magnetic flux, we study the possibility of stabilising a…
Measurement and theory of the two-terminal conductance of monolayer and bilayer graphene in the quantum Hall regime are compared. We examine features of conductance as a function of gate voltage that allow monolayer, bilayer, and gapped…
For graphene to be utilized in the digital electronics industry the challenge is to create bandgaps of order 1eV as simply as possible. The most successful methods for the creation of gaps in graphene are (a) confining the electrons in…
Trapping electrons in quantum dots and controlling their collective quantum states is crucial for converting semiconductor structures into bits of quantum information processing. Here, we study single- and two-particle states in quantum…
Synthetic quantum Hall bilayer (SQHB), realized by optically driven monolayer graphene in the quantum Hall regime, provides a flexible platform for engineering quantum Hall phases as discussed in [Phys. Rev. Lett. 119, 247403]. The coherent…
We present graphene quantum dots endowed with addition energies as large as 1.6 eV, fabricated by the controlled rupture of a graphene sheet subjected to a large electron current in air. The size of the quantum dot islands is estimated to…
The possibility to make 10 nm scale, and low-disorder, suspended graphene devices would open up many possibilities to study and make use of strongly coupled quantum electronics, quantum mechanics, and optics. We present a versatile method,…
Graphene nanoribbons with perfect edges are predicted to exhibit interesting electronic and spintronic properties, notably quantum-confined bandgaps and magnetic edge states. However, graphene nanoribbons produced by lithography have, to…
Here we report on low temperature transport measurements of encapsulated bilayer graphene nano constrictions fabricated employing electrode-free AFM-based local anodic oxidation (LAO) nanolithography. This technique allows for the creation…
It is shown that for monolayer graphene electrons are confined on a perfect two dimensional surface. The implications for the electronic properties of corrugated graphene are discussed in view of a derivation of the constrained relativistic…
Usually, graphene is used in its horizontal directions to design novel concept devices. Here, we report a single electron tunneling diode based on quantum tunneling through a vertical graphene two-barrier junction. The junction is formed by…
Graphene revealed a number of unique properties beneficial for electronics. However, graphene does not have an energy band-gap, which presents a serious hurdle for its applications in digital logic gates. The efforts to induce a band-gap in…
Moir\'e systems featuring flat electronic bands exhibit a vast landscape of emergent exotic quantum states, making them one of the resourceful platforms in condensed matter physics in recent times. Tuning these systems via twist angle and…