Related papers: Atomically thin boron nitride: a tunnelling barrie…
We demonstrate that freeing a single-atom thick layer of hexagonal boron nitride (hbn) from tight chemical bonding to a Ni(111) thin film grown on a W(110) substrate can be achieved by intercalation of Au atoms into the interface. This…
We study room temperature spin transport in graphene devices encapsulated between a layer-by-layer-stacked two-layer-thick chemical vapour deposition (CVD) grown hexagonal boron nitride (hBN) tunnel barrier, and a few-layer-thick…
One of the most promising building blocks for the development of spin qubits, single-photon sources, and quantum sensors at room temperature, as well as 2D ultraviolet light-emitting diodes, are defect colour centres in 2D hexagonal boron…
Over the past decade, graphene has emerged as a promising candidate for exploring the viscous nature of electronic flow facilitated by the availability of extremely high-quality devices employing a graphene channel encapsulated within…
Hexagonal boron nitride is an ideal dielectric to form two-dimensional heterostructures due to the fact that it can be exfoliated to be just few atoms thick and its a very low density of defects. By placing graphene nanoribbons on high…
We propose monolayer epitaxial graphene and hexagonal boron nitride (h-BN) as ultimate thickness covalent spacers for magnetoresistive junctions. Using a first-principles approach, we investigate the structural, magnetic and spin transport…
We investigate the electronic and optical properties of lateral heterostructures made of alternated armchair ribbons of graphene and hexagonal boron nitride. It is known that the gapwidth of these heterostructures can be classified into…
Graphene plasmons were predicted to possess ultra-strong field confinement and very low damping at the same time, enabling new classes of devices for deep subwavelength metamaterials, single-photon nonlinearities, extraordinarily strong…
Hexagonal boron nitride (hBN) regains interest as a strategic component in graphene engineering and in van der Waals heterostructures built with two dimensional materials. It is crucial then, to handle reliable characterization techniques…
In twisted h-BN/graphene heterostructures, the complex electronic properties of the fast-traveling electron gas in graphene are usually considered to be fully revealed. However, the randomly twisted heterostructures may also have unexpected…
High mobility single and few-layer graphene sheets are in many ways attractive as nanoelectronic circuit hosts but lack energy gaps, which are essential to the operation of field-effect transistors. One of the methods used to create gaps in…
A novel crystalline structure of hybrid monolayer hexagonal boron nitride (BN) and graphene is predicted by means of the first-principles calculations. This material can be derived via boron or nitrogen atoms substituted by carbon atoms…
Employing first-principles calculations, we investigate efficiency of spin injection from a ferromagnetic (FM) electrode (Ni) into graphene and possible enhancement by using a barrier between the electrode and graphene. Three types of…
Graphene-covered copper surfaces have been exposed to borazine, (BH)3(NH)3, with the resulting surfaces characterized by low-energy electron microscopy. Although the intent of the experiment was to form hexagonal boron nitride (h-BN) on top…
Atomically thin two-dimensional (2D) hexagonal boron nitride (hBN) has emerged as an essential material for the encapsulation layer in van der Waals heterostructures and efficient deep ultra-violet optoelectronics. This is primarily due to…
We assess the potential of two-terminal graphene-hBN-graphene resonant tunneling diodes as high-frequency oscillators, using self-consistent quantum transport and electrostatic simulations to determine the time-dependent response of the…
Hexagonal boron nitride (h-BN) is a tantalizing material for solid-state quantum engineering. Analogously to three-dimensional wide-bandgap semiconductors like diamond, h-BN hosts isolated defects exhibiting visible fluorescence, and the…
Negative differential conductance and tunneling characteristics of two-terminal graphene devices are observed before and after electric breakdown, respectively. The former is caused by the strong scattering under a high E-field, and the…
Using the Bardeen tunneling method with first-principles wave functions, computations are made of the tunneling current in graphene / hexagonal-boron-nitride / graphene (G/h-BN/G) vertical structures. Detailed comparison with prior…
We present an experimental study of spin transport in single layer graphene using atomic sheets of hexagonal boron nitride (h-BN) as a tunnel barrier for spin injection. While h-BN is expected to be favorable for spin injection, previous…