Related papers: Dynamics of charged domain walls in ferroelectrics
This review describes in detail the essential techniques used in microscopic theories on spintronics. We have investigated the domain wall dynamics induced by electric current based on the $s$-$d$ exchange model. The domain wall is treated…
Field-induced domain wall dynamics in ferroelectric materials underpins multiple applications ranging from actuators to information technology devices and necessitates a quantitative description of the associated mechanisms including giant…
We study spin textures in a quantum Hall Ising ferromagnet. Domain walls between ferro and unpolarized states at $\nu=2$ are analyzed with a functional theory supported by a microscopic calculation. In a neutral wall, Hartree repulsion…
Understanding and controlling the motion, stability, and equilibrium configuration of ferroelectric domain walls is key for their integration into potential nanoelectronics applications, such as ferroelectric racetrack memories. Using…
We investigate magnetic domain wall (MDW) dynamics induced by applied electric fields in ferromagnetic-ferroelectric thin-film heterostructures. In contrast to conventional driving mechanisms where MDW motion is induced directly by magnetic…
Evolution of a stripe array of polarization domains triggered by the oxygen vacancy migration in an acceptor doped ferroelectric is investigated in a self-consistent manner. A comprehensive model based on the Landau-Ginzburg-Devonshire…
The response to a magnetic flux is considered of the vacuum state of charged Dirac fermions interacting with a domain wall made of a neutral spinless field in (3+1) dimensions with the fermion mass having a phase variation across the wall.…
We study the influence of oxygen vacancies on the formation of charged 180$^\circ$ domain walls in ferroelectric BaTiO$_3$ using first principles calculations. We show that it is favorable for vacancies to assemble in crystallographic…
Ferroelectric domain walls hold great promise for innovative applications in ferroelectric devices. However, the underlying mechanisms behind the observed giant conductance of charged domain walls remain poorly understood. Using a…
Ferroelectric domain walls are a rich source of emergent electronic properties and unusual polar order. Recent studies showed that the configuration of ferroelectric walls can go well beyond the conventional Ising-type structure. N\'eel-,…
Controlling magnetism using voltage is highly desired for applications, but remains challenging due to fundamental contradiction between polarity and magnetism. Here we propose a mechanism to manipulate magnetic domain walls in…
Domain wall dynamics in ferroic materials underpins functionality of data storage and information technology devices. Using localized electric field of a scanning probe microscopy tip, we experimentally demonstrate a surprisingly rich range…
We explore the magnetic-field-driven motion of domain walls with different chiralities in thin ferromagnetic films made of Pt/Co/Pt, Au/Co/Pt, and Pt/Co/Au. From the analysis of domain wall dynamics, we extract parameters characterizing the…
The electrical resistance of a diffusive ferromagnet with magnetic domain walls is studied theoretically, taking into account the spatial dependence of the magnetization. The semiclassical domain wall resistance is found to be either…
Domain walls in ferroelectric oxides provide fertile ground for the development of next-generation nanotechnology. Examples include domain-wall-based memory, memristors, and diodes, where the unusual electronic properties and the quasi-2D…
Ferroelectric domain wall motion is fundamental to the switching properties of ferroelectric devices and is influenced by a wide range of factors including spatial disorder within the material and thermal noise. We build a…
Domain structure of a fluid ferroelectric nematic is dramatically different from the domain structure of solid ferroelectrics since it is not restricted by rectilinear crystallographic axes and planar surface facets. We demonstrate that…
It is well known that stacking domains form in moir\'e superlattices due to the competition between the interlayer van der Waals forces and intralayer elastic forces, which can be recognized as polar domains due to the local spontaneous…
The static configuration of ferroelectric domain walls was investigated using atomic force microscopy on epitaxial PbZr0.2Ti0.8O3 thin films. Measurements of domain wall roughness reveal a power law growth of the correlation function of…
A promising mechanism for achieving colossal dielectric constants is to use insulating internal barrier layers, which typically form during synthesis and then remain in the material. It has recently been shown that insulating domain walls…