Related papers: Anisotropic effects and phonon induced spin relaxa…
Gate geometry and bias asymmetry can be used to engineer spin dynamics in gate-defined Ge hole quantum dots by reshaping the confinement potential and driving transitions between distinct confinement regimes. In this work, we show that…
Understanding the decoherence of electron spins in semiconductors due to their interaction with nuclear spins is of fundamental interest as they realize the central spin model and of practical importance for using electron spins as qubits.…
Controlling electron spins in double quantum dots allows individual electrons to be trapped and manipulated for next-generation solid-state qubit devices. In this paper, the study analyzes spin relaxation due to deformation potentials of…
A global quantitative picture of the phonon-induced two-electron spin relaxation in GaAs double quantum dots is presented using highly accurate numerical calculations. Wide regimes of interdot coupling, magnetic field magnitude and…
Among recent proposals for next-generation, non-charge-based logic is the notion that a single electron can be trapped and its spin can be manipulated through the application of gate potentials. In this paper, we present numerical…
Highly accurate numerical results of phonon-induced two-electron spin relaxation in silicon double quantum dots are presented. The relaxation, enabled by spin-orbit coupling and the nuclei of $^{29}$Si (natural or purified abundance), are…
We study theoretically the phonon-induced relaxation and decoherence of spin states of two electrons in a lateral double quantum dot in a SiGe/Si/SiGe heterostructure. We consider two types of singlet-triplet spin qubits and calculate their…
Spin-noise measurements can serve as direct probe for the microscopic decoherence mechanism of an electronic spin in semiconductor quantum dots (QD).We have calculated the spin-noise spectrum in the anisotropic central spin model using a…
We consider a mechanism of spin decay for an electron spin in a quantum dot due to coupling to a nearby quantum point contact (QPC) with and without an applied bias voltage. The coupling of spin to charge is induced by the spin-orbit…
Mechanical degrees of freedom very weakly couple to spins in semiconductors. The inefficient coupling between phonons and single electron spins in semiconductor quantum dots (QDs) hinders their integration into on-chip acoustically coupled…
Phonon-assisted singlet-singlet relaxation in semiconductor quantum dot molecules is studied theoretically. Laterally coupled quantum dot structures doped with two electrons are considered. We take into account interaction with acoustic…
Spin-orbit mediated phonon relaxation in a two-dimensional quantum dot is investigated using different confining potentials. Elliptical harmonic oscillator and cylindrical well results are compared to each other in the case of a…
We investigate the electric field tuning of the phonon-assisted hole spin relaxation in single self-assembled In$_{1-x}$Ga$_{x}$As/GaAs quantum dots, using an atomistic empirical pseudopotential method. We find that the electric field along…
The authors report that anisotropic confining potentials in laterally-coupled semiconductor quantum dots (QDs) have large impacts in optical transitions and energies of inter-shell collective electronic excitations. The observed…
Optically active quantum dot molecules (QDMs) can host multi-spin quantum states with the potential for the deterministic generation of photonic graph states with tailored entanglement structures. Their usefulness for the generation of such…
Spin relaxation of a single electron in a weakly coupled double quantum dot is calculated numerically. The phonon assisted spin flip is allowed by the presence of the linear and cubic spin-orbit couplings and nuclear spins. The rate is…
Understanding the spin dephasing mechanism is of fundamental importance in all potential applications of the spin qubit. Here we demonstrate a spin dephasing mechanism in semiconductor quantum dot due to the $1/f$ charge noise. The…
We theoretically study the $(1,1)$ triplet to $(0,2)$ singlet relaxation rate in a lateral gate-defined double quantum dot tuned to the regime of Pauli spin blockade. We present a detailed derivation of the effective phonon density of…
Influence of resonant oscillating electromagnetic field on a single electron in coupled lateral quantum dots in the presence of phonon-induced relaxation and decoherence is investigated. Using symmetry arguments it is shown that spin and…
We study theoretically spin relaxation during phonon-assisted tunneling of a single electron in self-assembled InAs/GaAs quantum-dot molecules formed by vertically stacked dots. We find that the spin-flip tunneling rate may be as high as 1%…