Related papers: Micromagnetic Simulations for Spin Transfer Torque…
Magnetic random-access memory (MRAM) driven by spin-transfer torque (STT) is a major contender for future memory applications. The energy dissipation involved in writing remains problematic, even with the advent of more efficient…
We perform an experimental study of DC current induced microwave emission in a magnetic tunnel junction (MTJ) consisting of three active magnetic layers. For this tri-layer structure, in addition to a conventional bilayer orthogonal MTJ…
In ferromagnetic trilayers, a spin-orbit-induced spin current can have a spin polarization of which direction is deviated from that for the spin Hall effect. Recently, magnetization switching in ferromagnetic trilayers has been proposed and…
Oscillation frequency of spin torque oscillator with a perpendicularly magnetized free layer and an in-plane magnetized pinned layer is theoretically investigated by taking into account the field-like torque. It is shown that the field-like…
The self-oscillation of the magnetization in a spin torque oscillator (STO) with a perpendicularly magnetized free layer and an in-plane magnetized pinned layer in the absence of an applied magnetic field was studied by numerically solving…
Spin manipulation using electric currents is one of the most promising directions in the field of spintronics. We used neutron scattering to observe the influence of an electric current on the magnetic structure in a bulk material. In the…
The pseudo-spin model for double layer quantum Hall system with total landau level filling factor $\nu=1$ is discussed. Unlike the "traditional" one where interlayer voltage enters as static magnetic field along pseudo- spin hard axis, in…
Deterministic current-induced spin-orbit torque (SOT) switching of magnetization in a heavy transition metal/ferromagnetic metal/oxide magnetic heterostructure with the ferromagnetic layer being perpendicularly-magnetized typically requires…
Spin filtering and its back-action spin transfer torque (STT) are key ingredients of latest spintronic devices based on magnetic tunnel junctions (MTJs). Resonant tunneling (RT), implemented by design or occurring as parasitic effects, is…
We theoretically study the spin current and spin-transfer torque generation in a conventional spin- valve hybrid structure of type ferromagnetic/normal metal/ferromagnetic (FM/NM/FM) made of the topological insulator (TI), in which a gate…
This paper describes a numerical experiment of magnetization switching driven by spin-polarized current in high-TMR magnetic tunnel junctions (TMR>100%). Differently from other works, the current density distribution throughout the…
Current-induced spin torques are of great interest to manipulate the orientation of nanomagnets without applying external magnetic fields. They find direct application in non-volatile data storage and logic devices, and provide insight into…
Current induced spin-orbit torques (SOTs) in Fe/Pt bilayers have been investigated utilizing the spin-orbit torque ferromagnetic resonance (SOT-FMR) measurement. Characterization of thin films with different thicknesses indicates existence…
Spin-torque driven ferromagnetic resonance (ST-FMR) is used to study magnetic excitations in Co/Ni synthetic layers confined in nanojunctions. Field swept ST-FMR measurements were conducted with a magnetic field applied perpendicular to the…
We have studied the spin orbit torque (SOT) in Pt/Co/Ir multilayers with 3 repeats of the unit structure. As the system exhibits oscillatory interlayer exchange coupling (IEC) with varying Ir layer thickness, we compare the SOT of films…
Skyrmions can be driven by spin-orbit torques as a result of the spin Hall effect. Here we model an additional contribution in ultra-thin multilayers, arising from the spin accumulation at heavy metal / ferromagnetic interfaces and observe…
Spin-torque nano-oscillators (STNOs) are a type of nanoscale microwave auto-oscillators utilizing spin-torque to generate magnetodynamics with great promise for applications in microwaves, magnetic memory, and neuromorphic computing. Here,…
The concept of perpendicular shape anisotropy spin-transfer torque magnetic random-access memory (PSA-STT-MRAM) consists in increasing the storage layer thickness to values comparable to the cell diameter, to induce a perpendicular shape…
Owing to the unique features of low Gilbert damping, long spin-diffusion lengths and zero Ohmic losses, magnetic insulators are promising candidate materials for next-generation spintronic applications. However, due to the localized…
The switching of magnetic layers is studied under the action of a spin current in a ferromagnetic metal/non-magnetic metal/ferromagnetic metal spin valve. We find that the main contribution to the switching comes from the non-equilibrium…