Related papers: 2D transport and screening in topological insulato…
The topological insulator BiSbTeSe$_2$ corresponds to a compensated semiconductor in which strong Coulomb disorder gives rise to the formation of charge puddles, i.e., local accumulations of charge carriers, both in the bulk and on the…
Features of a topological phase, and edge states in particular, may be obscured by overlapping in energy with a trivial conduction band. The topological nature of such a conductor, however, is revealed in its transport properties,…
The effect of surface disorder on electronic systems is particularly interesting for topological phases with surface and edge states. Using exact diagonalization, it has been demonstrated that the surface states of a 3D topological…
Three-dimensional topological insulators harbour metallic surface states with exotic properties. In transport or optics, these properties are typically masked by defect-induced bulk carriers. Compensation of donors and acceptors reduces the…
Topological insulators are characterized by specially protected conduction on their outer boundaries. We show that the protected edge conduction exhibited by 2-D topological insulators (and also Chern insulators) is independent of…
We theoretically study transport in two-dimensional semimetals. Typically, electron and hole puddles emerge in the transport layer of these systems due to smooth fluctuations in the potential. We calculate the electric response of the…
The archetypical 3D topological insulators Bi2Se3, Bi2Te3 and Sb2Te3 commonly exhibit high bulk conductivities, hindering the characterization of the surface state charge transport. The optimally doped topological insulators Bi2Te2Se and…
Three dimensional topological insulators are bulk insulators with $\mathbf{Z}_2$ topological electronic order that gives rise to conducting light-like surface states. These surface electrons are exceptionally resistant to localization by…
We present low-temperature transport measurements of a gate-tunable thin film topological insulator system that features high mobility and low carrier density. Upon gate tuning to a regime around the charge neutrality point, we infer an…
We present a theoretical approach to describe the 2D transport properties of the surfaces of three dimensional topological insulators (3DTIs) including disorder and phonon scattering effects. The method that we present is able to take into…
Electronic transport experiments involving the topologically protected states found at the surface of Bi2Se3 and other topological insulators require fine control over carrier density, which is challenging with existing bulk-doped material.…
The surface conductivity for conduction electrons with a fixed chirality in a topological insulator with impurities scattering is considered. The surface excitations are described by the Weyl Hamiltonian. For a finite chemical potential one…
Low-field magnetotransport measurements of topological insulators such as Bi$_2$Se$_3$ are important for revealing the nature of topological surface states by quantum corrections to the conductivity, such as weak-antilocalization. Recently,…
Controlling charged impurity disorder is a critical challenge for realizing the promise of topological insulator (TI) surfaces in devices. While doping is often used to tune the chemical potential, its impact on the fundamental disorder…
Topological insulators (TIs) are predicted to be composed of an insulating bulk state along with conducting channels on the boundary of the material. In Bi2Se3, however, the Fermi level naturally resides in the conduction band due to…
Topological insulators are bulk semiconductors that manifest in-gap massless Dirac surface states due to the topological bulk-boundary correspondence principle [1-3]. These surface states have been a subject of tremendous ongoing interest,…
Compensation of intrinsic charges is widely used to reduce the bulk conductivity of 3D topological insulators (TIs). Here we use low temperature electron irradiation-induced defects paired with in-situ electrical transport measurements to…
The spin-polarized surface states in topological insulators offer unique transport characteristics that make them distinguishable from trivial conductors. Here, we detect the impact of these surface states in the topological insulator…
We investigate the effect of a crystal edge dislocation on the metallic surface of a Topological Insulator. The edge dislocation gives rise to torsion which the electrons experience as a spin connection. As a result the electrons propagate…
To harness the true potential of topological insulators as quantum materials for information processing, it is imperative to maximise topological surface state conduction, while simulateneously improving their quantum coherence. However,…