Related papers: Insulating behavior in ultra-thin bismuth selenide…
We investigate transport through ionic liquid gated field effect transistors (FETs) based on exfoliated crystals of semiconducting WS$_2$. Upon electron accumulation, at surface densities close to -or just larger than- 10$^{14}$ cm$^{-2}$,…
Raman scattering [K. M. F. Shahil et al., Appl. Phys. Lett. 96, 153103 (2010), V. Gnezdilov et al., Phys. Rev. B 84, 195118 (2011) and H. H. Kung et al., Phys. Rev. B 95, 245406 (2017)], inelastic helium scattering [X. Zhu et al., Phys.…
We demonstrate the ability to reduce the carrier concentration of thin films of the topological insulator (TI) Bi2Se3 by utilizing a novel approach, namely non-volatile electrostatic gating via corona charging of electret polymers.…
The band structure, intra- and interband scattering processes of the electrons at the surface of a bismuth-bilayer on Bi$_2$Se$_3$ have been experimentally investigated by low-temperature Fourier-transform scanning tunneling spectroscopy.…
We perform electric double-layer gating experiments on thin films of niobium nitride. Thanks to a cross-linked polymer electrolyte system of improved efficiency, we induce surface charge densities as high as $\approx 2.8 \times…
We characterize the topological insulator Bi$_2$Se$_3$ using time- and angle- resolved photoemission spectroscopy. By employing two-photon photoemission, a complete picture of the unoccupied electronic structure from the Fermi level up to…
By means of relativistic density functional theory (DFT) calculations we study electron band structure of the topological insulator (TI) Bi$_2$Se$_3$ thin films deposited on the ferromagnetic insulator (FMI) EuS substrate. In the…
The layered nature and simple structure of FeSe reveal this iron-based superconductor as a unique building block for the design of artificial heterostructure materials. While superconductivity develops in ultrathin films of FeSe on SrTiO3…
The capability to switch electrically between superconducting and insulating states of matter represents a novel paradigm in the state-of-the-art engineering of correlated electronic systems. An exciting possibility is to turn on…
Despite many years of efforts, attempts to reach the quantum regime of topological surface states (TSS) on an electrically tunable topological insulator (TI) platform have so far failed on binary TI compounds such as Bi2Se3 due to high…
Topological insulators (TIs) are predicted to be composed of an insulating bulk state along with conducting channels on the boundary of the material. In Bi2Se3, however, the Fermi level naturally resides in the conduction band due to…
Superconductivity and topological quantum states are two frontier fields of research in modern condensed matter physics. The realization of superconductivity in topological materials is highly desired, however, superconductivity in such…
We report on the fabrication and characterization of single crystal field-effect transistors (FETs) based on diphenylbenzo diselenophene (DPh-BDSe). These organic field-effect transistors (OFETs) function as p-channel accumulation-mode…
In recent years, a low pressure transition around P $\sim$ 3 GPa exhibited by the A$_2$B$_3$-type 3D topological insulators is attributed to an electronic topological transition (ETT) for which there is no direct evidence either from theory…
We report on the low-frequency current fluctuations and electronic noise in thin-films made of bismuth selenide topological insulators. The films were prepared via the graphene-like mechanical exfoliation and used as the current conducting…
By eliminating normal fabrication processes, we preserve the bulk insulating state of calcium-doped Bi2Se3 single crystals in suspended nanodevices, as indicated by the activated temperature dependence of the resistivity at low…
Topological insulators (TIs) are a promising class of materials for manipulating the magnetization of an adjacent ferromagnet (FM) through the spin-orbit torque (SOT) mechanism. However, current studies combining TIs with conventional FMs…
We extract the quantum conductance fluctuations and study its magnetic field dependence in the gate-dependent transport of the topological electrons in bulk-insulating BiSbTeSe2 devices. While increasing the magnetic field from 0 to 12…
We have studied the electron transport properties of topological insulator-related material Bi2Se3 near the superconducting Pb-Bi2Se3 interface, and found that a superconducting state is induced over an extended volume in Bi2Se3. This state…
Bi2Se3 is theoretically predicted1 2and experimentally observed2,3 to be a three dimensional topological insulator. For possible applications, it is important to understand the electronic structure of the planar device. In this work,…