Related papers: Dielectric breakdown in spin polarized Mott insula…
The effect of a magnetic field on Mott-Hubbard systems is investigated by studying the half-filled Hubbard model in the limit of infinite dimensions. A first-order metamagnetic transition between the strongly correlated metal and the Mott…
With the aid of both a semi-analytical and a numerically exact method we investigate the charge dynamics in the vicinity of half-filling in the one- and two-dimensional $t$-$J$ model derived from a Fermi-Hubbard model in the limit of large…
The recently observed superconductivity in twisted bilayer graphene emerges from insulating states believed to arise from electronic correlations. While there have been many proposals to explain the insulating behaviour, the…
The Mott-Hubbard transition is studied in the context of the two-dimensional Hubbard model. Analytical calculations show the existence of a critical value Uc of the potential strength which separates a paramagnetic metallic phase from a…
We study the photoinduced breakdown of a two-orbital Mott insulator and resulting metallic state. Using time-dependent density matrix renormalization group, we scrutinize the real-time dynamics of the half-filled two-orbital Hubbard model…
The role of the electron-phonon interaction in the Holstein-Hubbard model is investigated in the metallic phase close to the Mott transition and in the insulating Mott phase. The model is studied by means of a variational slave boson…
We study dielectric breakdown in a semi-classical bond percolation model for nonlinear composite materials introduced by us and the related breakdown exponent near the percolation threshold in two dimensions. The breakdown exponent after…
The influence of the homogeneous magnetic field on a single mobile hole in a magnetic insulator, as represented by the two-dimensional t-J model, is investigated by considering the coupling of the field to the orbital current. The energy of…
We study antiferromagnetism and single-particle properties in the two-dimensional half-filled Hubbard model at low temperature. Collective spin fluctuations are governed by a non-linear sigma model that we derive from the Hubbard model for…
With the hierarchical Green's function approach, we study a doped Mott insulator described with the Hubbard model by analytically solving the equations of motion of an one-particle Green's function and related multiple-point correlation…
We study the non-equilibrium dynamics of a simple model for V2O3 that consists of a quarter-filled Hubbard model for two orbitals that are split by a weak crystal field. Peculiarities of this model are: (1) a Mott insulator whose gap…
We investigate the ground state phase diagram of the half-filled repulsive Hubbard model in two dimensions in the presence of a staggered potential $\Delta$, the so-called ionic Hubbard model, using cluster dynamical mean field theory. We…
We consider the dimer Hubbard model within Dynamical Mean Field Theory to study the interplay and competition between Mott and Peierls physics. We describe the various metal-insulator transition lines of the phase diagram and the break down…
A theory is developed for the T=0 Mott-Hubbard insulating phases of the infinite-dimensional Hubbard model at half-filling, including both the antiferromagnetic (AF) and paramagnetic (P) insulators. Local moments are introduced explicitly…
We demonstrate the existence of an unconventional pairing state in photodoped Mott insulators on ladder and quasi-two-dimensional geometries, characterized by quasi-long-range doublon-holon correlations that signal Mott exciton…
The model of Kondo chain with $M$-fold degenerate band of conduction electrons of spin 1/2 interacting with localized spins $S$ is studied for the case when the electronic band is half filled. It is shown that the spectrum of spin…
The paramagnetic phase of the one-band Hubbard model is studied at zero-temperature, within the framework of dynamical mean-field theory, and for general particle-hole asymmetry where a doping-induced Mott transition occurs. Our primary…
By comparing the responses to an in-plane magnetic field near the metal-insulator transition (MIT), we find that the observed MIT in Si MOSFETs can be described by the non-perturbative Mott-Hubbard scenario. Interrelations between…
The ionic Hubbard model on a cubic lattice is investigated using analytical approximations and Wilson's renormalization group for the charge excitation spectrum. Near the Mott insulating regime, where the Hubbard repulsion starts to…
An analysis of Luttinger's theorem shows that -- contrary to recent claims -- it is not valid for a generic Mott insulator. For a two-orbital Hubbard model with two electrons per site the crossover from a non-magnetic correlated insulating…