Related papers: Correlation-Strength Driven Anderson Metal-Insulat…
We study Anderson localization in two-dimensional systems with purely off-diagonal disorder. Localization lengths are computed by the transfer-matrix method and their finite-size and scaling properties are investigated. We find various…
Quantum transitions between the Mott insulator and metals by controlling filling in two-dimensional square lattice are characterized by a large dynamical exponent $z=4$ where the origin of unusual metallic properties near the Mott insulator…
The critical electron density for the metal-insulator transition in a two-dimensional electron gas can be determined by two distinct methods: (i) a sign change of the temperature derivative of the resistance, and (ii) vanishing activation…
Recently, a metal-insulator transition (MIT) was found in the anisotropic Anderson model of localization by transfer-matrix methods (TMM). This MIT has been also investigated by multifractal analysis (MFA) and the same critical disorders…
Controlling phase transitions in transition metal oxides remains a central feature of both technological and fundamental scientific relevance. A well-known example is the metal-insulator transition which has been shown to be highly…
We study the Anderson-type transition previously found in the spectrum of the QCD quark Dirac operator in the high temperature, quark-gluon plasma phase. Using finite size scaling for the unfolded level spacing distribution, we show that in…
We investigate the doping-driven metal-insulator transition of the (2+1)-dimensional Hubbard model in the path-integral formalism with the tensor renormalization group method. We calculate the electron density $\langle n\rangle$ as a…
Disorder or sufficiently strong interactions can render a metallic state unstable causing it to turn into an insulating one. Despite the fact that the interplay of these two routes to a vanishing conductivity has been a central research…
We introduce a systematic low-energy approach to strongly correlated electron systems in infinite dimensions, and apply it to the problem of the correlation-induced metal-insulator transition in the half-filled Hubbard model. We determine…
The Mott transition is a paradigmatic phenomenon where Coulomb interactions between electrons drive a metal-insulator phase transition. It is extensively studied within the Hubbard model, where a quantum critical transition occurs at a…
We study the effect of disorder and doping on the metal-insulator transition in a repulsive Hubbard model on a square lattice using the determinant quantum Monte Carlo method. First, with the aim of making our results reliable, we compute…
We calculate self-consistently the mutual dependence of electron correlations and electron-defect scattering for a two dimensional electron gas at finite temperature. We employ an STLS approach to calculate the electron correlations while…
A new type of delocalization induced by coherent harmonic perturbations in one-dimensional Anderson-localized disordered systems is investigated. With only a few $M$ frequencies a normal diffusion is realized, but the transition to…
We study the metal-insulator transition (MIT) in weakly coupled disordered planes on the basis of a Non-Linear Sigma Model (NL$\sigma $M). Using two different methods, a renormalization group (RG) approach and an auxiliary field method, we…
Based on the random dimer model, we study correlated disorder in a one dimensional system driven by a strong AC field. As the correlations in a random system may generate extended states and enhance transport in DC fields, we explore the…
In the present work, we investigated the correlation-induced localization-delocalization transition in the one-dimensional tight-binding model with fractal disorder. We obtained a phase transition diagram from localized to extended states…
The Anderson metal-insulator transition (MIT) is central to our understanding of the quantum mechanical nature of disordered materials. Despite extensive efforts by theory and experiment, there is still no agreement on the value of the…
A central property of (Chern) topological insulators is the presence of robust asymmetric transport along interfaces separating two-dimensional insulating materials in different topological phases. A Topological Anderson Insulator is an…
The presence of disorder can severely impede wave transport, resulting in the famous Anderson localization. Previous theoretical studies found that Anderson transition can exist in one-dimensional (1D) non-Hermitian disordered rings with…
We present a detailed, quantitative study of the competition between interaction- and disorder-induced effects in electronic systems. For this the Anderson-Hubbard model with diagonal disorder is investigated analytically and by Quantum…