Related papers: Electric-field-driven phase transition in vanadium…
We incorporate single crystal Fe$_3$O$_4$ thin films into a gated device structure and demonstrate the ability to control the Verwey transition with static electric fields. The Verwey transition temperature ($T_V$) increases for both…
The metal-insulator transition (MIT) in vanadium dioxide (VO2) has the potential to lead to a number of disruptive technologies, including ultra-fast data storage, optical switches, and transistors which move beyond the limitations of…
Vanadium oxides are strongly correlated materials which display metal-insulator transitions as well as various structural and magnetic properties that depend heavily on oxygen stoichiometry. Therefore, it is crucial to precisely control…
The correlated electron system SmNiO3 exhibits a metal-insulator phase transition at 130 {\deg}C. Using an ionic liquid as an electric double layer (EDL) gate on three-terminal ultrathin SmNiO3 devices, we investigate gate control of the…
Various electronic phases emerge when applying high magnetic fields in graphite. However, the origin of a semimetal-insulator transition at $B \simeq 30\; \textrm{T}$ is still not clear, while an exotic density-wave state is theoretically…
We report the observation of a parallel magnetic field induced metal-insulator transition (MIT) in a high-mobility two-dimensional electron gas (2DEG) for which spin and localization physics most likely play no major role. The high-mobility…
Electrical characterization of few-layer MoS2 based field effect transistors with Ti/Au electrodes is performed in the vacuum chamber of a scanning electron microscope in order to study the effects of electron beam irradiation on the…
The electrodynamics near the metal-to-insulator transitions (MIT) induced, in V3O5 single crystals, by both temperature (T) and pressure (P) has been studied by infrared spectroscopy. The T- and P-dependence of the optical conductivity may…
Using light to control transient phases in quantum materials is an emerging route to engineer new properties and functionality, with both thermal and non-thermal phases observed out of equilibrium. Transient phases are expected to be…
Some features of the field induced phase transition accompanied by the vacuum creation of an electron-positron plasma (EPP) in strong time-dependent electric fields have been discussed in the work [1] in the domain of the tunneling…
Thermochromic vanadium dioxide thin films have attracted much attention recently for constructing variable-emittance coatings upon its insulator-metal phase transition for dynamic thermal control. However, fabrication of high-quality…
A study of dynamic and reversible voltage controlled magnetization switching in ferromagnetic Co/Pt thin film with perpendicular magnetic anisotropy at room temperature is presented. The change in the magnetic properties of the system is…
DC and finite frequency transport measurements of thin films of amorphous indium oxide that were driven through the critical point of superconductor-insulator transition by the application of perpendicular magnetic field are presented. The…
The colossal electroresistance in manganites is a concomitant of the electric field induced insulator-to-metal phase transition. A phenomenological phase transition model is proposed to study this electric field induced collapse of…
The Metal-Insulator transition (MIT) in VO2 is characterized by the complex interplay among lattice, electronic and orbital degrees of freedom. In this contribution we investigated the strain-modulation of the orbital hierarchy and the…
The primary mechanism of operation of almost all transistors today relies on electric-field effect in a semiconducting channel to tune its conductivity from the conducting 'on'-state to a non-conducting 'off'-state. As transistors continue…
The parallel magnetic field tuned two-dimensional superconductor-insulator transition has been investigated in ultrathin films of amorphous Bi. The resistance is found to be independent of temperature on both sides of the transition below…
The in-plane magnetoconductance of the strongly interacting two-dimensional electron system in a silicon MOSFET (metal-oxide-semiconductor-field-effect transistor) exhibits an unmistakeable kink at a well-defined electron density, $n_k$.…
Contact effects in devices incorporating strongly-correlated electronic materials are comparatively unexplored. We have investigated the electrically-driven phase transition in magnetite (100) thin films by four-terminal methods. In the…
We apply ultrafast spectroscopy to establish a time-domain hierarchy between structural and electronic effects in a strongly-correlated electron system. We discuss the case of the model system VO2, a prototypical non-magnetic compound that…