Related papers: Domain Wall Conductivity in Oxygen Deficient Multi…
Magnetic domain walls can be moved by spin-polarized currents due to spin-transfer torques. This opens the possibility to use them in spintronic memory devices as, e.g., in racetrack storage. Naturally, in miniaturized devices domain walls…
Switchability of materials properties by applying controlled stimuli such as voltage pulses is an emerging field of study with applicability in adaptive and programmable devices like neuromorphic transistors or non-emissive smart displays.…
We investigate magnetic domain walls in a single fcc Mn layer on Re(0001) employing spin-polarized STM, atom manipulation, and spin dynamics simulations. The low symmetry of the row-wise antiferromagnetic (1Q) state leads to a new type of…
Using Landau-Ginzburg-Devonshire theory we calculated numerically the static conductivity of both inclined and counter domain walls in the uniaxial ferroelectrics-semiconductors of n-type. We used the effective mass approximation for the…
Ferroelectric domain walls are attracting broad attention as atomic-scale switches, diodes and mobile wires for next-generation nanoelectronics. Charged domain walls in improper ferroelectrics are particularly interesting as they offer…
We investigate the electronic properties of multi-domain configurations in models for undoped manganites by means of variational and Monte Carlo techniques. These materials display simultaneous Jahn-Teller distortions and magnetic ordering.…
Spontaneous symmetry breakings, metal-insulator transitions, and transport properties of magnetic-domain-wall states in pyrochlore iridium oxides are studied by employing a symmetry adapted effective hamiltonian with a slab perpendicular to…
The dynamics of a multiferroic domain wall in which an electric field can couple to the magnetization via inhomogeneous magnetoelectric interaction is investigated by the collective-coordinate framework. We show how the electric field is…
Ferroelectric domain walls represent multifunctional 2D-elements with great potential for novel device paradigms at the nanoscale. Improper ferroelectrics display particularly promising types of domain walls, which, due to their unique…
We present a theoretical study of spin-dependent transport through a ferromagnetic domain wall. With an increase of the number of components of the exchange coupling, we have observed that the variance of the conductance becomes half. As…
The conductance of domain wall structures consisting of either stripes or cylindrical domains in multi-axial ferroelectric-semiconductors is analyzed. The effects of the domain size, wall tilt and curvature, on charge accumulation, are…
We report on the dynamics of a conducting domain wall under applied dc and ac voltages. These dynamics are modeled for a thin film that hosts an ideal charged domain wall via a combination of time-dependent Ginzburg-Landau equations for the…
We report on the characterization of Pt-YBa$_2$Cu$_3$O$_{7-\delta}$ interfaces, focusing on how oxygen vacancies content ($\delta$) affects electrical transport mechanisms. Our study examines four Pt-YBa$_2$Cu$_3$O$_{7-\delta}$ samples with…
Cylindrical magnetic nanowires have been proposed as a means of storing and processing information in a 3D medium, based on the motion of domain walls~(DWs). Introducing short chemical modulations in such wires would allow for reliable…
Electrically-conducting diamond is a promising candidate for next-generation electronic, thermal and electrochemical applications. One of the major obstacles towards its exploitation is the strong degradation that some of its key physical…
The domain structure of (1-x)Pb(Mg1/3Nb2/3)O3- xPbTiO3 single crystals with composition x ~ 0.33 in the range of the morphotropic phase boundary (MPB) was studied. Based on the analysis of spontaneous strain compatibility and charge of…
Motivated by the results of recent transport and optical conductivity studies, we propose a semi-infinite two-dimensional lattice model for interacting massive Dirac electrons in the pressurized organic conductor…
Bilayer graphene subjected to perpendicular magnetic and electric fields displays a subtle competition between different symmetry broken phases, resulting from an interplay between the internal spin and valley degrees of freedom. The…
Domain walls are the transition regions between two magnetic domains. These objects have been very relevant during the last decade, not only due to their intrinsic interest in the development of novel spintronics devices but also because of…
The quantum Hall conductance in monolayer graphene on an epitaxial SrTiO3 (STO) thin film is studied to understand the role of oxygen vacancies in determining the dielectric properties of STO. As the gate voltage sweep range is gradually…