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Motivated by recent experiments on suspended graphene showing carrier mobilities as high as 200,000 cm^2/Vs, we theoretically calculate transport properties assuming Coulomb impurities as the dominant scattering mechanism. We argue that the…

Materials Science · Physics 2008-05-11 S. Adam , S. Das Sarma

It is widely assumed that the dominant source of scattering in graphene is charged impurities in a substrate. We have tested this conjecture by studying graphene placed on various substrates and in high-k media. Unexpectedly, we have found…

We review the physics of charged impurities in the vicinity of graphene. The long-range nature of Coulomb impurities affects both the nature of the ground state density profile as well as graphene's transport properties. We discuss the…

Mesoscale and Nanoscale Physics · Physics 2009-05-29 S. Adam , E. H. Hwang , E. Rossi , S. Das Sarma

Carrier transport in gated 2D graphene monolayers is theoretically considered in the presence of scattering by random charged impurity centers with density $n_i$. Excellent quantitative agreement is obtained (for carrier density $n >…

Mesoscale and Nanoscale Physics · Physics 2007-10-09 E. H. Hwang , S. Adam , S. Das Sarma

We theoretically revisit graphene transport properties as a function of carrier density, taking into account possible correlations in the spatial distribution of the Coulomb impurity disorder in the environment. We find that the charged…

Mesoscale and Nanoscale Physics · Physics 2011-10-06 Qiuzi Li , E. H. Hwang , E. Rossi , S. Das Sarma

We demonstrate theoretically that most of the observed transport properties of graphene sheets at zero magnetic field can be explained by scattering from charged impurities. We find that, contrary to common perception, these properties are…

Mesoscale and Nanoscale Physics · Physics 2008-01-14 Shaffique Adam , E. H. Hwang , Victor Galitski , S. Das Sarma

We review our recent work on the physical mechanisms limiting the mobility of graphene on SiO2. We have used intentional addition of charged scattering impurities and systematic variation of the dielectric environment to differentiate the…

Materials Science · Physics 2009-06-10 J. -H. Chen , C. Jang , M. Ishigami , S. Xiao , E. D. Williams , M. S. Fuhrer

We develop a theory for density, disorder, and temperature dependent electrical conductivity of bilayer graphene in the presence of long-range charged impurity scattering as well as an additional short-range disorder of independent origin,…

Mesoscale and Nanoscale Physics · Physics 2010-04-21 S. Das Sarma , E. H. Hwang , E. Rossi

Different scattering mechanisms in graphene are explored and conductivity is calculated within the Boltzmann transport theory. We provide results for short-range scattering using the Random Phase Approximation for electron screening, as…

Mesoscale and Nanoscale Physics · Physics 2008-03-15 Shaffique Adam , E. H. Hwang , S. Das Sarma

We study charged impurity scattering and static screening in a top-gated substrate-supported graphene nanostructure. Our model describes how boundary conditions can be incorporated into scattering, sheds light on the dielectric response of…

Mesoscale and Nanoscale Physics · Physics 2015-06-05 Zhun-Yong Ong , Massimo V. Fischetti

We study both monolayer and bilayer graphene transport properties taking into account the presence of correlations in the spatial distribution of charged impurities. In particular we find that the experimentally observed sublinear scaling…

Mesoscale and Nanoscale Physics · Physics 2012-07-10 Qiuzi Li , E. H. Hwang , E. Rossi

A general theory is developed to describe graphene with arbitrary number of isolated impurities. The theory provides a basis for an efficient numerical analysis of the charge transport and is applied to calculate the minimal conductivity of…

Mesoscale and Nanoscale Physics · Physics 2011-03-28 P. M. Ostrovsky , M. Titov , S. Bera , I. V. Gornyi , A. D. Mirlin

We theoretically calculate the impurity-scattering induced resistivity of twisted bilayer graphene at low twist angles where the graphene Fermi velocity is strongly suppressed. We consider, as a function of carrier density, twist angle, and…

Mesoscale and Nanoscale Physics · Physics 2020-03-23 E. H. Hwang , S. Das Sarma

We calculate the carrier density dependent ground state properties of graphene in the presence of random charged impurities in the substrate taking into account disorder and interaction effects non-perturbatively on an equal footing in a…

Mesoscale and Nanoscale Physics · Physics 2008-10-17 Enrico Rossi , S. Das Sarma

Since the experimental realization of graphene1, extensive theoretical work has focused on short-range disorder2-5, ''ripples''6, 7, or charged impurities2, 3, 8-13 to explain the conductivity as a function of carrier density…

Other Condensed Matter · Physics 2009-11-13 J. H. Chen , C. Jang , M. S. Fuhrer , E. D. Williams , M. Ishigami

Pristine graphene and graphene-based heterostructures exhibit exceptionally high electron mobility and conductance if their surface contains few electron-scattering impurities. Here, we reveal a universal connection between graphene's…

Charged impurity (CI) scattering is one of the dominant factors that affect the carrier mobility in graphene. In this paper, we use Raman spectroscopy to probe the charged impurities in suspended graphene. We find that the 2D band intensity…

The full counting statistics for the charge transport through an undoped graphene sheet in the presence of strong potential impurities is studied. Treating the scattering off the impurity in the s-wave approximation, we calculate the…

Mesoscale and Nanoscale Physics · Physics 2013-05-29 M. Titov , P. M. Ostrovsky , I. V. Gornyi , A. Schuessler , A. D. Mirlin

The ground-state and the transport properties of graphene subject to the potential of in-plane charged impurities are studied. The screening of the impurity potential is shown to be nonlinear, producing a fractal structure of electron and…

Mesoscale and Nanoscale Physics · Physics 2009-12-02 M. M. Fogler

We present a study of transport in graphene devices on polar insulating substrates by solving the Bolzmann transport equation in the presence of graphene phonon, surface polar phonon, and Coulomb charged impurity scattering. The value of…

Mesoscale and Nanoscale Physics · Physics 2015-05-18 Vasili Perebeinos , Phaedon Avouris
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