Related papers: Magnetophonon resonance in graphite: High-field Ra…
We perform polarization-resolved Raman spectroscopy on graphene in magnetic fields up to 45T. This reveals a filling-factor-dependent, multi-component anticrossing structure of the Raman G peak, resulting from magnetophonon resonances…
Magneto Raman scattering study of the E$_{2g}$ optical phonons in multi-layer epitaxial graphene grown on a carbon face of SiC are presented. At 4.2K in magnetic field up to 33 T, we observe a series of well pronounced avoided crossings…
We use polarized magneto-Raman scattering to study purely electronic excitations and the electron-phonon coupling in bulk graphite. At a temperature of 4.2 K and in magnetic fields up to 28 T we observe $K$-point electronic excitations…
Magneto-Raman scattering experiments from the surface of graphite reveal novel features associated to purely electronic excitations which are observed in addition to phonon-mediated resonances. Graphene-like and graphite domains are…
We have studied, both experimentally and theoretically, the change of the so-called 2D band of the Raman scattering spectrum of graphene (the two-phonon peak near 2700 cm-1) in an external magnetic field applied perpendicular to the…
Our low-temperature magneto-Raman scattering measurements performed on graphene-like locations on the surface of bulk graphite reveal a new series of magneto-phonon resonances involving both K-point and Gamma-point phonons. In particular,…
We report a comprehensive study of the tuning with electric fields of the resonant magneto-exciton optical phonon coupling in gated graphene. For magnetic fields around $B \sim 25$ T which correspond to the range of the fundamental…
We study the fine structure of the phonon G peak in the inelastic light scattering spectra of strained graphene in the presence of a quantizing magnetic field. We show that under the conditions of the magnetophonon resonance (MPR), the…
We show how the magneto-phonon resonance, particularly pronounced in sp2 carbon allotropes, can be used as a tool to probe the band structure of multilayer graphene specimens. Even when electronic excitations cannot be directly observed,…
The magneto-phonon resonance or MPR occurs in semiconductor materials when the energy spacing between Landau levels is continuously tuned to cross the energy of an optical phonon mode. MPRs have been largely explored in bulk semiconductors,…
Time-resolved Raman spectroscopy has been applied to probe the anharmonic coupling and electron-phonon interaction of optical phonons in graphite. From the decay of the transient anti-Stokes scattering of the G-mode following ultrafast…
We describe a peculiar fine structure acquired by the in-plane optical phonon at the Gamma-point in graphene when it is brought into resonance with one of the inter-Landau-level transitions in this material. The effect is most pronounced…
We report a comprehensive micro-Raman scattering study of electrochemically-gated graphene field-effect transistors. The geometrical capacitance of the electrochemical top-gates is accurately determined from dual-gated Raman measurements,…
Coherent coupling of Dirac fermion magneto-excitons with an optical phonon is observed in graphite as marked magnetic-field dependent splittings and anti-crossing behavior of the two coupled modes. The sharp magneto-phonon resonance occurs…
The Raman active G mode in graphene exhibits strong coupling to electrons, yet the comprehensive treatment of this interaction in the calculation of its temperature-dependent Raman spectrum remains incomplete. In this study, we calculate…
We report on resonance Raman spectroscopy measurements with excitation photon energy down to 1.16 eV on graphene, to study how low-energy carriers interact with lattice vibrations. Thanks to the excitation energy close to the Dirac point at…
Far from resonance, the coupling of the G-band phonon to magneto-excitons in single layer graphene displays kinks and splittings versus filling factor that are well described by Pauli blocking and unblocking of inter- and intra- Landau…
The Raman peak position and linewidth provide insight into phonon anharmonicity and electron-phonon interactions (EPI) in materials. For monolayer graphene, prior first-principles calculations have yielded decreasing linewidth with…
The importance of phonons in the strong correlation phenomena observed in twisted bilayer graphene (TBG) at the so-called magic-angle is under debate. Here we apply gate-dependent micro-Raman spectroscopy to monitor the G band linewidth in…
We review the different results obtained in the last decade in the field of Raman scattering of graphene based systems, with an applied magnetic field. Electronic properties of graphene based systems with an applied magnetic field will…