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We present the first time-resolved cryogenic observations of Forster energy transfer in large, monodisperse lead sulphide quantum dots with ground state transitions near 1.5 um (0.83 eV), in environments from 160 K to room temperature. The…
The trapped-ion quantum charge-coupled device (QCCD) architecture is a leading candidate for advanced quantum information processing. In current QCCD implementations, imperfect ion transport and anomalous heating can excite ion motion…
Quantum confined devices of three-dimensional topological insulators have been proposed to be promising and of great importance for studies of confined topological states and for applications in low energy-dissipative spintronics and…
We have fabricated a custom cryogenic Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuit that has a higher measurement bandwidth compared with conventional room temperature electronics. This allowed implementing single shot…
We report measurements of the Kondo effect in a double quantum dot (DQD), where the orbital states act as pseudospin states whose degeneracy contributes to Kondo screening. Standard transport spectroscopy as a function of the bias voltage…
When a quantum dot is subjected to a thermal gradient, the temperature of electrons entering the dot can be determined from the dot's thermocurrent if the conductance spectrum and background temperature are known. We demonstrate this…
Defect concentrations in semiconductors are strongly influenced by thermal history during growth and cooldown, yet most defect calculations assume either instantaneous quenching from high temperature or that full-equilibrium is maintained -…
Semiconductor quantum dots (QDs) are being regarded as the primary unit for a wide range of advanced and emerging technologies including electronics, optoelectronics, photovoltaics and biosensing applications as well as the domain of q-bits…
We study single-electron transport through a double quantum dot (DQD) monitored by a capacitively coupled quantum point-contact (QPC) electrometer. We derive the full counting statistics for the coupled DQD - QPC system and obtain the joint…
We present the results of a finite-element solution of the Laplace equation for the silicon-based trench-isolated double quantum-dot and the capacitively-coupled single-electron transistor device architecture. This system is a candidate for…
We propose and demonstrate experimentally a novel design of single-electron quantum dots. The structure consists of a narrow band gap quantum well that can undergo a transition from the hole accumulation regime to the electron inversion…
Understanding the thermodynamic role of measurement in quantum mechanical systems is a burgeoning field of study. In this article, we study a double quantum dot (DQD) connected to two macroscopic fermionic thermal reservoirs. We assume that…
A new theoretical method is introduced to study coherent electron transport in an interacting multilevel quantum dot. The method yields the correct behavior both in the limit of weak and strong coupling to the leads, giving a unified…
Owing to a few unique advantages, double-dot single electron transistor has been proposed as an alternative detector for charge states. In this work, we present a further study for its signal-to-noise property, based on a full analysis of…
Zero dimensional graphene quantum dots (GQDs) exhibit interesting physical and chemical properties due to the edge effect and quantum confinement. As the number of carbon atoms in edge is more than on basal plane, GQDs are more reactive.…
We review mechanisms of low-temperature electronic transport through a quantum dot weakly coupled to two conducting leads. Transport in this case is dominated by electron-electron interaction. At temperatures moderately lower than the…
Experiments on the direction-resolved full-counting statistics of single-electron tunneling allow testing the fundamentally important Fluctuation Theorem (FT). At the same time, the FT provides a frame for analyzing such data. Here we…
We study the transport properties of a double quantum dot (DQD) molecule at zero and at finite temperature. The properties of the zero temperature conductance depends on whether the level attraction between the symmetric and antisymmetric…
The temporal evolution of quantal Joule heating of 2D electrons in GaAs quantum well placed in quantizing magnetic fields is studied using a difference frequency method. The method is based on measurements of the electron conductivity…
The charging of a quantum box, coupled to a lead by tunneling through a single resonant level, is studied near the degeneracy points of the Coulomb blockade. Combining Wilson's numerical renormalization-group method with perturbative…