Related papers: GHz bandwidth electro-optics of a single self-asse…
The electron-phonon coupling in self-assembled InGaAs quantum dots is relatively weak at low light intensities, which means that the zero-phonon line in emission is strong compared to the phonon sideband. However, the coupling to acoustic…
Bright single photon emission from single quantum dots in suspended circular Bragg grating microcavities is demonstrated. This geometry has been designed to achieve efficient (> 50 %) single photon extraction into a near-Gaussian shaped…
Integrated quantum photonics provides a scalable platform for the generation, manipulation, and detection of optical quantum states by confining light inside miniaturized waveguide circuits. Here we show the generation, manipulation, and…
Leveraging hybrid integration, we demonstrate dark-pulse formation at 780-nm wavelength band in integrated Si$_3$N$_4$ microresonators driven by high-power AlGaAs-based chip-scale lasers. The device outputs coherent frequency combs with…
We describe a setup that is used for high-frequency electrical sample excitation in a cathode lens electron microscope with the sample stage at high voltage as used in many synchrotron light sources. Electrical signals are transmitted by…
We demonstrate coherent control of a quantum dot exciton using photocurrent detection with a sinusoidal reverse bias. Optical control is performed at low bias, where tunneling-limited coherence times are long. Following this step, the…
A heavy hole confined to an InGaAs quantum dot promises the union of a stable spin and optical coherence to form a near perfect, high-bandwidth spin-photon interface. Despite theoretical predictions and encouraging preliminary measurements,…
We present a feasible scheme for performing an optically controlled phase gate between two conduction electron spin qubits in adjacent self assembled quantum dots. Interaction between the dots is mediated by the tunneling of the valence…
We present a spectroscopic study of excitation dynamics in self assembled CdTe/ZnTe quantum dots. Insight into details of kinetics is obtained from the time resolved micro-photoluminescence, single photon correlation and subpicosecond…
Encoding quantum information in the photon temporal mode (TM) offers a robust platform for high-dimensional quantum protocols. The main practical challenge, however, is to design a device that operates on single photons in specific TMs and…
Control of components in integrated photonic circuits is crucial in achieving programmable devices. Operation bandwidth of a plasmonic device cannot be generally tuned once it is manufactured, especially in the visible regime. Here, we…
Quasi-static transport measurements are employed on a laterally defined tunnel-coupled double quantum dot. A nearby quantum point contact allows us to track the charge as added to the device. If charged with only up to one electron, the…
We theoretically investigate the phenomenon of voltage-controlled intracavity electromagnetically induced transparency with asymmetric double quantum dot system. The impact of voltage on frequency pulling and cavity linewidth narrowing are…
A pulsed balanced homodyne detector has been developed for precise measurements of electric field quadratures of pulsed optical quantum states. A high level of common mode suppression (> 85 dB) and low electronic noise (730 electrons per…
The optical properties of single InAsP/InP quantum dots are investigated by spectrally-resolved and time-resolved photoluminescence measurements as a function of excitation power. In the short-wavelength region (below 1.45 $\mu$m), the…
Due to the advantage of tunability via size, shape, doping and relatively low level of loss and high extent of spatial confinement, graphene quantum dots (GQDs) are emerging as an effective way to control light by molecular engineering. The…
Planar light-emitting diodes (LEDs) fabricated within a single high-mobility quantum well are demonstrated. Our approach leads to a dramatic reduction of radiative lifetime and junction area with respect to conventional vertical LEDs,…
We report on linewidth analysis of optical transitions in InAs/GaAs coupled quantum dots as a function of bias voltage, temperature, and tunnel coupling strength. A significant line broadening up to 100 $\mu$eV is observed at hole tunneling…
We present an inverted GaAs 2D electron gas with self-assembled InAs quantum dots in close proximity, with the goal of combining quantum transport with quantum optics experiments. We have grown and characterized several wafers -- using…
Single electron spins in semiconductor quantum dots (QDs) are a versatile platform for quantum information processing, however controlling decoherence remains a considerable challenge. Recently, hole spins have emerged as a promising…