Related papers: Binary switching in a symmetric potential landscap…
We calculate the charge current generated by a temperature bias between the two ends of a tubular nanowire. We show that in the presence of a transversal magnetic field the current can change sign, i.e., electrons can either flow from the…
The spin-orbit torque device is promising as a candidate for next generation magnetic memory, while the static in-plane field needed to induce deterministic switching is a main obstacle for its application in highly integrated circuits.…
Quasi-optical experiments are emerging as a powerful technique to probe magnetic transitions in molecular spin systems. However, the simultaneous presence of the electric- and magnetic-dipole induced transitions poses the challenge of…
Reversible control of magnetization by electric fields without assistance from a subsidiary magnetic field or electric current could help reduce the power consumption in spintronic devices. When increasing temperature above room…
Deterministic magnetization switching using spin-orbit torque (SOT) has recently emerged as an efficient means to electrically control the magnetic state of ultrathin magnets. The SOT switching still lacks in oscillatory switching…
Spin-transfer is a typical spintronics effect that allows a ferromagnetic layer to be switched by spin-injection. Most of the experimental results about spin transfer are described on the basis of the Landau-Lifshitz-Gilbert equation of the…
A theoretical formula is derived for the threshold current to switch a perpendicular magnetization in a ferromagnet by the spin Hall effect. The numerical simulation of the Landau-Lifshitz-Gilbert equation indicates that magnetization…
Multiferroic devices hold profound promise for ultra-low energy computing in beyond Moore's law era. The magnetization of a magnetostrictive shape-anisotropic single-domain nanomagnet strain-coupled with a piezoelectric layer in a…
Twisting two-dimensional van der Waals magnets allows the formation and control of different spin-textures, as skyrmions or magnetic domains. Beyond the rotation angle, different spin reversal processes can be engineered by increasing the…
We predict an anomalous bias dependence of the spin transfer torque parallel to interface, $T_{||}$, in magnetic tunnel junctions (MTJ), which can be selectively tuned by the exchange splitting. It may exhibit a sign reversal {\it without}…
We studied the spin torque switching of the single free layer in the thermally activated region by numerically solving the Landau-Lifshitz-Gilbert equation. We found that the temperature dependence of the switching time of the in-plane…
The dependence of thermally induced spontaneous magnetization reversal on time-dependent cooling protocols was studied. Slower cooling and longer waiting close to the N\`{e}el temperature of the antiferromagnet ($T_N$) enhances the…
The advent of twist-engineering in two-dimensional (2D) crystals enables the design of van der Waals (vdW) heterostructures exhibiting emergent properties. In the case of magnets, this approach can afford artificial antiferromagnets with…
The dynamics of the ferromagnetic order parameter in thin magnetic films is strongly affected by the magnetomechanical coupling at certain resonance frequencies. By solving the equation of motion of the coupled mechanical and magnetic…
We study the combined effects of spin transfer torque, voltage modulation of interlayer exchange coupling and magnetic anisotropy on the switching behavior of perpendicular magnetic tunnel junctions (p-MTJs). In asymmetric p-MTJs, a…
Heat waste is a bottleneck in the development of green information technologies and much effort has been devoted to suppress the heating effect in both electronic and spintronic devices. Here we take an alternative approach and show that…
We investigate the exchange bias and training effects in the FM/AF heterostructures using a unified Monte Carlo dynamical approach. This real dynamical method has been proved reliable and effective in simulating dynamical magnetization of…
The spin transport characteristics of a nanowire directional electronic coupler have been evaluated theoretically via a transfer matrix approach. The application of a gate field in the region of mixing allows for control of spin current…
We show that spin-polarized dc current passing through a small magnetic element induces two-state, random telegraph switching of the magnetization via the spin-momentum transfer effect. The resistances of the states differ by up to 50% of…
In the development of spin-based electronic devices, a particular challenge is the manipulation of the magnetic state with high speed and low power consumption. Although research has focused on the current-induced spin-orbit torque based on…