Related papers: A hybrid double-dot in silicon

The cuprates seem to exhibit statistics, dimensionality and phase transitions in novel ways. The nature of excitations [i.e. quasiparticle or collective], spin-charge separation, stripes [static and dynamics], inhomogeneities, psuedogap,…

We have measured a graphene double quantum dot device with multiple electrostatic gates that are used to enhance control to investigate it. At low temperatures the transport measurements reveal honeycomb charge stability diagrams which can…

We present an advanced lateral triple quantum dot made by local anodic oxidation. Three dots are coupled in a starlike geometry with one lead attached to each dot thus allowing for multiple path transport measurements with two dots per…

We investigate sequential tunneling transport through a semiconductor double quantum dot structure by combining a simple microscopic quantum confinement model with a Mott-Hubbard type correlation model. We calculate nonperturbatively the…

We study the Anderson model in which a configuration with a doublet is hybridized with another with a singlet and a triplet. We calculate the conductance through the system as a function of temperature and bias voltage, near the quantum…

We study resonant tunneling through quantum-dot systems in the presence of strong Coulomb repulsion and coupling to the metallic leads. Motivated by recent experiments we concentrate on (i) a single dot with two energy levels and (ii) a…

We characterize the single-electron energies and the wavefunction structure of arrays with two, three, and four phosphorus atoms in silicon by implementing atomistic tight-binding calculations and analyzing wavefunction overlaps to identify…

We demonstrate the possibility of engineering a single donor transistor directly from a phosphorous doped quantum dot by making use of the intrinsic glassy behaviour of the structure as well as the complex electron dynamics during cooldown.…

We present a systematic study of various ways (top gates, local doping, substrate bias) to fabricate and tune multi-dot structures in silicon nanowire multigate MOSFETs (metal-oxide-semiconductor field-effect transistors). The carrier…

We study the formation of molecular states in a two-electron quantum dot as a function of the barrier potential dividing the dot. The increasing barrier potential drives the two electron system from an artificial helium atom to an…

Electronic transport through a two-path triple-quantum-dot system with two source leads and one drain is studied. By separating the conductance of the two double dot paths, we are able to observe double dot and triple dot physics in…

Doping of silicon via phosphene exposures alternating with molecular beam epitaxy overgrowth is a path to Si:P substrates for conventional microelectronics and quantum information technologies. The technique also provides a new and…

Artificial lattices constructed from individual dopant atoms within a semiconductor crystal hold promise to provide novel materials with tailored electronic, magnetic, and optical properties. These custom engineered lattices are anticipated…

Real-time detection of single electron tunneling through a T-shaped double quantum dot is simulated, based on a Monte Carlo scheme. The double dot is embedded in a dissipative environment and the presence of electrons on the double dot is…

We propose a scheme for electrical measurement of two-electron spin states in a semiconductor double quantum dot. We calculated the adiabatic charge transfer when surface gates are modulated in time. Because of spin-orbit coupling in the…

By varying the gate and substrate voltage in a short silicon-on-insulator trigate field effect transistor we control the ionization state of three arsenic donors. We obtain a good quantitative agreement between 3D electrostatic simulation…

We report low-temperature transport measurements through a double quantum dot device in a configuration where one of the quantum dots is coupled directly to the source and drain electrodes, and a second (side-coupled) quantum dot interacts…

We report on low-temperature electronic transport measurements of a silicon metal-oxide-semiconductor quantum dot, with independent gate control of electron densities in the leads and the quantum dot island. This architecture allows the dot…

Because it is easily switched from insulator to metal either via chemical doping or electrical gating, silicon is at the core of modern information technology and remains a candidate platform for quantum computing. The metal-to-insulator…

Charge collection measurements performed on heavily irradiated p-spray DOFZ pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete…